5秒后页面跳转
UMB10F PDF预览

UMB10F

更新时间: 2024-10-15 18:04:43
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
5页 331K
描述
Reverse Voltage Vr : 1000 V;Forward Current Io : 0.5/0.8 A;Max Surge Current : 20 A;Forward Voltage Vf : 1.1 V;Reverse Current Ir : 5.0 uA;Recovery Time :;Package / Case : SOF2-4;Mounting Style : Through-hole;Notes : SOF2-4,0.5/0.8 A,1000 V,Bridge

UMB10F 数据手册

 浏览型号UMB10F的Datasheet PDF文件第2页浏览型号UMB10F的Datasheet PDF文件第3页浏览型号UMB10F的Datasheet PDF文件第4页浏览型号UMB10F的Datasheet PDF文件第5页 
UMB05F  
THRU  
UMB10F  
Ultra Miniature Glass Passivated Single-Phase  
Surface Mount Flat Bridge Rectifier  
Features  
ƽ
Low profile space  
ƽ
ƽ
ƽ
ƽ
ƽ
ƽ
Ideal for automated placement  
Glass passivated chip junction  
Low forward voltage drop  
Low leakage current  
SOF2-4  
High forward surge capability  
High temperature soldering  
˖
260ć/10 seconds at terminals  
ƽ
Component in accordance to  
RoHS 2002/95/1 and WEEE 2002/96/EC  
Mechanical Date  
ƽ
Case: SOF2-4 Molded plastic  
over glass passivated chip  
ƽ
Terminals: Solder plated, solderable per  
J-STD-002B and JESD22-B102D  
ƽ
Polarity: Polarity symbols marked on body  
(TA = 25 °C unless otherwise noted)  
Maximum Ratings & Thermal Characteristics  
UMB UMB UMB UMB UMB UMB UMB  
Items  
Symbol  
UNIT  
05F  
1F  
100  
70  
2F  
4F  
6F  
8F  
10F  
1000  
700  
VRRM  
VRMS  
VDC  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
50  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
V
V
V
35  
Maximum DC blocking voltage  
50  
100  
1000  
Maximum average forward rectified current  
-on glass-epoxy P.C.B(1)  
-on aluminum substrate(2)  
IF(AV)  
at TA=30  
0.5  
0.8  
A
A
Peak forward surge current 8.3 ms single  
half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
20  
I2t  
2
Typical Current Squared Time  
1.66  
A S  
(1)  
100  
80  
RθJA  
Thermal resistance from junction to ambient  
per leg  
/W  
/W  
(2)  
RθJA  
Thermal resistance from junction to lead per  
leg(1)  
RθJL  
30  
Operating junction and storage temperature  
range  
TJ ,TSTG  
–55 to +150  
Note 1: On glass epoxy P.C.B. mounted on 0.06×0.04 (1.5×1.1mm) pads  
Note 2: On aluminum substrate P.C.B. with an area of 0.8 0.8 (20×20mm) mounted on 0.06×0.04 (1.5×1.1mm) solder pad  
(TA = 25 °C unless otherwise noted)  
Electrical Characteristics  
Items  
Symbol  
Min  
Type  
Max  
1.10  
5
UNIT  
VF  
Instantaneous forward voltage per leg  
=
-
0.96  
V
IF 0.4A  
Tj =25  
Tj =125  
IR  
Reverse current per leg VR=VDC  
-
-
-
uA  
100  
-
Tr r  
uSec  
2
Reverse Recovery Time (Note 2)  
Notes: 1.Pulse test :300 us pulse width,1% duty cycle.  
2018-10/08  
REV:A  
2.Test Conditions: IF= 0.5A, IR= -1.0A, IRR= -0.25A.  

与UMB10F相关器件

型号 品牌 获取价格 描述 数据表
UMB10FB7 MDD

获取价格

SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS
UMB10N ROHM

获取价格

General purpose (dual digital transistors)
UMB10N MCC

获取价格

Tape: 3K/Reel,120K/Ctn;
UMB10N YANGJIE

获取价格

SOT-363
UMB10N_1 ROHM

获取价格

General purpose (dual digital transistors)
UMB10NFHA ROHM

获取价格

车载数字晶体管与通用品共用数据表。下订单时,请注意下列型号命名方式,编写为车载型号。
UMB10NFHATN ROHM

获取价格

Small Signal Bipolar Transistor,
UMB10NFHATR ROHM

获取价格

暂无描述
UMB10NTL ROHM

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon,
UMB10NTN ROHM

获取价格

PNP -100mA -50V Complex Digital Transistors