Datasheet > UMA11N

UMA11N

更新时间： 2024-11-26 12:20:39

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体数字晶体管
页数	文件大小	规格书
1页	338K
描述
dual digital transistors (PNP PNP)

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中文翻译

获取价格

数据手册

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UMA11N 数据手册

UMA11N

dual digital transistors (PNP+ PNP)

SOT-353

FEATURES

Two DTA143Z chips in a package

Mounting cost and area can be cut in half

Marking: A11

Equivalent circuit

Absolute maximum ratings (T_a=25℃)

Symbol

V_CC

I_C(MAX)

V_i

Parameter

Supply Voltage

Value

-50

Units

Output Current

-100

Input Voltage

-30 to +5

150

P_D

Power Dissipation

Junction Temperature

Storage Temperature

T_J

150

℃

T_stg

-55~+150

℃

Electrical Characteristics (T_a=25℃)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Input turn-on voltage

Input cut-off voltage

Output voltage

V_i(on)

V_i(off)

V_O(on)

I_i

V_O=-0.3V, I_O=-5mA

_CC=-5V, I_O=-100µA

-1.3

-0.5

I_O=-5mA, I_i=-0.25 mA

V_i=-5V

-0.3

-1.8

-0.5

Input cut-off current

Output cut-off current

DC current gain

µA

I_O(off)

G_i

V_CC=-50V, V_i=0

V_O=-5V, I_O=-10mA

V_O=-10V, I_O=-5mA, f =100MHz

Transition frequency

Input resistance

f_T

250

MHz

R₁

3.29

6.11

KΩ

Resistance ratio

R_2/R₁

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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