UM9441

更新时间： 2024-09-13 03:23:31

品牌	Logo	应用领域
美高森美 - MICROSEMI		PIN二极管测试
页数	文件大小	规格书
4页	196K
描述
PIN RADIATION DETECTORS

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中文翻译

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技术参数
数据手册

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UM9441 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	包装说明：	O-XALF-W2
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.25
Is Samacsys：	N	其他特性：	HIGH RELIABILITY, METALLURGICALLY BONDED
最小击穿电压：	100 V	外壳连接：	ISOLATED
配置：	SINGLE	最大二极管电容：	10 pF
标称二极管电容：	10 pF	二极管元件材料：	SILICON
二极管类型：	PIN DIODE	JESD-30 代码：	O-XALF-W2
JESD-609代码：	e0	少数载流子标称寿命：	2 µs
元件数量：	1	端子数量：	2
最高工作温度：	175 °C	封装主体材料：	UNSPECIFIED
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
反向测试电压：	50 V	子类别：	PIN Diodes
表面贴装：	NO	技术：	POSITIVE-INTRINSIC-NEGATIVE
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

UM9441 数据手册

UM9441

PIN RADIATION DETECTORS

KEY FEATURES

DESCRIPTION

High Photocurrent Sensitivity

High Reliability Construction

Fast Rise Time

Description

temperature so long as applied voltage

exceeds the saturation voltage. This

structure also minimizes the effects of

Silicon PIN devices are effective

detectors of nuclear and

electromagnetic radiation. This includes permanent damage caused by neutrons and

gamma radiation, electrons, and X-rays. other high energy radiation. Experiments on

The detectors can be used across the

devices of the UM9441 design show no

Wide Dynamic Range

temperature range of -55 ^oC to +175 ^oC degradation in gamma sensitivity resulting

instead of being restricted to use at low from a total dose of 10¹⁴neutrons/cm²of

Hardness to Neutron

temperatures.

1 MeV equivalent.

Bombardment

The absorbed radiation produces

electron-hole pairs in the space charge

Package

Low operating Voltage

The UM9441 is an axially leaded device

region. These charges are swept out by constructed by metallurgically bonding the

the applied field and result in a current PIN chip in between two molybdenum

flow proportional to the rate of

absorbed radiation.

refractory pins that are typically 0.125

inches in diameter and 0.050 inches long.

Hyper-pure glass is then fused over this

bond to form a void less seal. Leads are then

brazed to ends of molybdenum pins. This

results in a high-reliability package using

The Microsemi UM9441 series

utilizes high resistivity material and is

designed to have a uniform area mesa

structure to define the active volume.

APPLICATIONS/BENEFITS

Surface Mount package available

The current sensitivity of this device is materials so well thermally matched that the

proportional only to the I-region

volume and is independent of

UM9441 can withstand temperature shock

or cycling from -196 ^oC to +300 ^oC.

RoHS compliant devices

available

IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com

ABSOLUTE MAXIMUM RATINGS AT 25º C

(UNLESS OTHERWISE SPECIFIED)

Rating

Symbol

Value

Unit

Reverse Voltage

Photocurrent

Storage Temperature

V _R

100

3Adc

-55 to +200

3A²s pulsed

ºC

T stg

T op

Operating Temperature

-55 to +175

ºC

Rev. 0, 2006-03-14

Microsemi

Page 1

12 3 4

中文翻译

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与UM9441相关器件

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UM9441_06	MICROSEMI	获取价格	PIN RADIATION DETECTORS
UM9441-CHIP	SSDI	获取价格	Diode,
UM95080	ETC	获取价格	ONE KEY DIALER TONE DIALER
UM95081	ETC	获取价格	ONE KEY DIALER TONE DIALER
UM95087	ETC	获取价格	ONE KEY DIALER TONE DIALER
UM95088	ETC	获取价格	Telecommunication IC
UM95089	UMC	获取价格	UM95089
UM9552	MICROSEMI	获取价格	PIN DIODE ATTENUATOR
UM9552R	MICROSEMI	获取价格	Pin Diode, Silicon,
UM9552S	MICROSEMI	获取价格	Pin Diode, Silicon,

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