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UM7508B

更新时间： 2024-11-29 08:15:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 衰减器开关测试二极管
页数 文件大小 规格书
9页 286K
描述
Pin Diode, 800V V(BR), Silicon, HERMETIC SEALED PACKAGE-2

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中文翻译

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UM7508B 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete包装说明：HERMETIC SEALED PACKAGE-2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.35其他特性：LOW DISTORTION, METALLURGICALLY BONDED
应用：ATTENUATOR; SWITCHING最小击穿电压：800 V
外壳连接：ISOLATED配置：SINGLE
最大二极管电容：1 pF标称二极管电容：0.8 pF
二极管元件材料：SILICON最大二极管正向电阻：1 Ω
二极管电阻测试电流：50 mA二极管电阻测试频率：100 MHz
二极管类型：PIN DIODEJESD-30 代码：O-XALF-W2
JESD-609代码：e0少数载流子标称寿命：3.5 µs
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
封装主体材料：UNSPECIFIED封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
最大功率耗散：1.5 W认证状态：Not Qualified
反向测试电压：100 V子类别：PIN Diodes
表面贴装：NO技术：POSITIVE-INTRINSIC-NEGATIVE
端子面层：TIN LEAD端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED

UM7508B 数据手册

 浏览型号UM7508B的Datasheet PDF文件第2页浏览型号UM7508B的Datasheet PDF文件第3页浏览型号UM7508B的Datasheet PDF文件第4页浏览型号UM7508B的Datasheet PDF文件第5页浏览型号UM7508B的Datasheet PDF文件第6页浏览型号UM7508B的Datasheet PDF文件第7页 
UM7500  
POWER PIN DIODES  
KEY FEATURES  
DESCRIPTION  
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ƒ
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Voltage Ratings to 1400 Volt  
The UM7500 series features Microsemi’s  
Low leakage distortion is achieved by  
innovative passivated chip design which  
takes advantage of the latest silicon wafer  
bonding and junction passivation  
maintaining high carrier lifetime and accurately  
controlling I-region thickness throughout the  
process. The UM7500 series is designed for use  
in a broad range of RF and microwave switch and  
attenuator circuits. The packages make this series  
suitable for many high-end medical applications  
Fully Passivated PIN Chip  
Low Leakage, IR < 0.5 µA  
techniques. This new series of PIN diodes  
incorporates all of the desirable RF  
Void Less, Particle Free Construction  
Hermetic Fused in Glass  
properties of previous Microsemi diodes  
plus extremely low leakages and very stable such as MRI and CAT scan equipment. For  
reverse characteristics. Power dissipation  
capability is assured by Microsemi’s  
metallurgically bonded, fused in glass  
military applications, the new series is capable of  
meeting all the requirements of MIL-STD-750  
including HTRB screening at 80% of rated  
Low Loss, Low Distortion  
Surface Mount Package Available  
construction. This technique continues to be voltage at 150 OC.  
the optimum approach for applications  
Metallurgically Bonded, Thermally  
Matched Construction  
requiring reliable, high power diodes.  
ƒ
Compatible with automatic insertion  
equipment  
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com  
ABSOLUTE MAXIMUM RATINGS AT 25º C  
(UNLESS OTHERWISE SPECIFIED)  
Package  
A
Condition  
PD  
θ
APPLICATIONS/BENEFITS  
25 OC Pin Temperature  
10 W 15 OC/W  
ƒ Isolated stud package available  
ƒ Surface mount package available  
ƒ RoHS compliant packaging  
available: use UMX7501B, etc.  
B & E ½ in. total length to 25 OC Contact 5.5 W 27.5 OC/W  
Free Air  
1.5 W  
C
D
25 OC Stud Temperature  
10 W 15 OC/W  
25 OC Stud Temperature  
7.5 W 20 OC/W  
SM  
25 OC End Cap Temperature  
7.5 W 20 OC/W  
All  
1 us pulse (Single)  
35 kW  
OPERATING AND STORAGE  
TEMPERATURE RANGE  
-65 OC to + 175 OC  
VOLTAGE RATINGS  
Reverse Voltage @ 0.5 uA  
100V  
200V  
UM7501  
UM7502  
UM7504  
UM7506  
UM7508  
UM7510  
UM7512  
UM7514  
400V  
600V  
800V  
1000V  
1200V  
1400V  
Copyright 2005  
Microsemi  
Page 1  
Rev. 0, 2005-11-03  
1234567...9

中文翻译

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