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UM7506EE3 PDF预览

UM7506EE3

更新时间： 2024-11-28 19:13:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 衰减器开关二极管
页数 文件大小 规格书
9页 286K
描述
Pin Diode, Silicon, HERMETIC SEALED PACKAGE-2

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中文翻译

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UM7506EE3 技术参数

生命周期：Active包装说明：O-XAMW-F2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.66
其他特性：LOW DISTORTION, METALLURGICALLY BONDED应用：ATTENUATOR; SWITCHING
配置：SINGLE最大二极管电容：1 pF
二极管元件材料：SILICON最大二极管正向电阻：1 Ω
二极管类型：PIN DIODEJESD-30 代码：O-XAMW-F2
少数载流子标称寿命：3.5 µs元件数量：1
端子数量：2封装主体材料：UNSPECIFIED
封装形状：ROUND封装形式：MICROWAVE
最大功率耗散：1.5 W表面贴装：YES
技术：POSITIVE-INTRINSIC-NEGATIVE端子形式：FLAT
端子位置：AXIALBase Number Matches：1

UM7506EE3 数据手册

 浏览型号UM7506EE3的Datasheet PDF文件第2页浏览型号UM7506EE3的Datasheet PDF文件第3页浏览型号UM7506EE3的Datasheet PDF文件第4页浏览型号UM7506EE3的Datasheet PDF文件第5页浏览型号UM7506EE3的Datasheet PDF文件第6页浏览型号UM7506EE3的Datasheet PDF文件第7页 
UM7500  
POWER PIN DIODES  
KEY FEATURES  
DESCRIPTION  
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Voltage Ratings to 1400 Volt  
The UM7500 series features Microsemi’s  
Low leakage distortion is achieved by  
innovative passivated chip design which  
takes advantage of the latest silicon wafer  
bonding and junction passivation  
maintaining high carrier lifetime and accurately  
controlling I-region thickness throughout the  
process. The UM7500 series is designed for use  
in a broad range of RF and microwave switch and  
attenuator circuits. The packages make this series  
suitable for many high-end medical applications  
Fully Passivated PIN Chip  
Low Leakage, IR < 0.5 µA  
techniques. This new series of PIN diodes  
incorporates all of the desirable RF  
Void Less, Particle Free Construction  
Hermetic Fused in Glass  
properties of previous Microsemi diodes  
plus extremely low leakages and very stable such as MRI and CAT scan equipment. For  
reverse characteristics. Power dissipation  
capability is assured by Microsemi’s  
metallurgically bonded, fused in glass  
military applications, the new series is capable of  
meeting all the requirements of MIL-STD-750  
including HTRB screening at 80% of rated  
Low Loss, Low Distortion  
Surface Mount Package Available  
construction. This technique continues to be voltage at 150 OC.  
the optimum approach for applications  
Metallurgically Bonded, Thermally  
Matched Construction  
requiring reliable, high power diodes.  
ƒ
Compatible with automatic insertion  
equipment  
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com  
ABSOLUTE MAXIMUM RATINGS AT 25º C  
(UNLESS OTHERWISE SPECIFIED)  
Package  
A
Condition  
PD  
θ
APPLICATIONS/BENEFITS  
25 OC Pin Temperature  
10 W 15 OC/W  
ƒ Isolated stud package available  
ƒ Surface mount package available  
ƒ RoHS compliant packaging  
available: use UMX7501B, etc.  
B & E ½ in. total length to 25 OC Contact 5.5 W 27.5 OC/W  
Free Air  
1.5 W  
C
D
25 OC Stud Temperature  
10 W 15 OC/W  
25 OC Stud Temperature  
7.5 W 20 OC/W  
SM  
25 OC End Cap Temperature  
7.5 W 20 OC/W  
All  
1 us pulse (Single)  
35 kW  
OPERATING AND STORAGE  
TEMPERATURE RANGE  
-65 OC to + 175 OC  
VOLTAGE RATINGS  
Reverse Voltage @ 0.5 uA  
100V  
200V  
UM7501  
UM7502  
UM7504  
UM7506  
UM7508  
UM7510  
UM7512  
UM7514  
400V  
600V  
800V  
1000V  
1200V  
1400V  
Copyright 2005  
Microsemi  
Page 1  
Rev. 0, 2005-11-03  
1234567...9

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