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UM6606BE3

更新时间： 2024-02-29 05:38:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 衰减器开关二极管
页数 文件大小 规格书
10页 326K
描述
Pin Diode, Silicon,

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中文翻译

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UM6606BE3 技术参数

生命周期：Active包装说明：O-XALF-W2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.63
应用：ATTENUATOR; SWITCHING外壳连接：ISOLATED
配置：SINGLE最大二极管电容：0.4 pF
二极管元件材料：SILICON最大二极管正向电阻：2.5 Ω
二极管类型：PIN DIODE频带：ULTRA HIGH FREQUENCY
JESD-30 代码：O-XALF-W2少数载流子标称寿命：1 µs
元件数量：1端子数量：2
封装主体材料：UNSPECIFIED封装形状：ROUND
封装形式：LONG FORM最大功率耗散：2.5 W
表面贴装：NO技术：POSITIVE-INTRINSIC-NEGATIVE
端子形式：WIRE端子位置：AXIAL
Base Number Matches：1

UM6606BE3 数据手册

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UM6000 / UM6200/UM6600  
POWER PIN DIODES  
KEY FEATURES  
DESCRIPTION  
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Voltage ratings to 1000V  
These series of PIN diodes are designed for used successfully in switches in which low  
applications requiring small package size  
and moderate average power handling  
capability. The low capacitance of the  
UM6000 and UM6600 allows them to be  
insertion loss at low bias current is required.  
The “A” style package for this series is the  
smallest Microsemi PIN diode package. It has  
been used successfully in many microwave  
Average power dissipation to 6 W  
Series resistance as low as 0.4 Ω  
Carrier lifetime greater than 1.0 µs  
Non cavity design  
used as series switching elements to 1 GHz. applications using coaxial, microstrip, and  
The low resistance of the UM6200 is useful stripline techniques at frequencies beyond X-  
in applications where forward bias current  
must be minimized.  
Band. The “B” and “E” style leaded packages  
offer the highest available power dissipation for a  
Thermally matched configuration  
Low capacitance at 0 V bias  
Low conductance at 0 V bias  
Because of its thick I-region width and long package this small. They have been used  
lifetime the UM6000 and UM6600 have  
been used in distortion sensitive and high  
extensively as series switch elements in  
microstrip circuits. The “C” style package  
peak power applications, including receiver duplicates the physical outline available in  
protectors, TACN, and IFF equipment.  
Their low capacitance allows them to be  
useful as attenuator diodes at frequencies  
greater than 1 GHz. The UM6200 has been  
conventional ceramic-metal packages but  
incorporates the many reliability advantages of  
the Microsemi construction.  
Compatible with automatic insertion  
equipment  
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com  
ABSOLUTE MAXIMUM RATINGS AT 25º C  
(UNLESS OTHERWISE SPECIFIED)  
APPLICATIONS/BENEFITS  
ƒ Isolated stud package available  
ƒ Surface mount package available  
ƒ RoHS compliant packaging  
available: use UMX6001B, etc.  
Package  
Condition  
UM6000/UM6600  
UM6200  
PD  
θ
PD  
θ
A & C 25 OC Pin Temperature  
6 W  
25 OC/W  
4 W 37.5 oC/W  
2.0 W 75 oC/W  
0.5 W  
B & E ½ in. total length to 25 OC Contact 2.5 W  
60 OC/W  
0.5 W  
Free Air  
SM  
All  
25 OC End Cap Temperature  
4.5 W  
27.5OC/W 3.0 W 42.5 oC/W  
UM6000 25 kW  
UM6600 13 kW  
1 us pulse (Single)  
10 kW  
VOLTAGE RATINGS  
Reverse Voltage @ 10 uA  
100  
200  
UM6001  
UM6002  
-
UM6006  
UM6010  
UM6201  
UM6601  
UM6602  
-
UM6606  
UM6610  
UM6202  
400  
UM6204  
800  
-
-
1000  
Copyright 2005  
Microsemi  
Page 1  
Rev. 0, 2006-03-13  
1234567...10

中文翻译

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UM6606EE3 MICROSEMI

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UM6606SM MICROSEMI

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