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UM4010SME3 PDF预览

UM4010SME3

更新时间: 2024-11-02 08:18:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 衰减器开关二极管
页数 文件大小 规格书
12页 932K
描述
Pin Diode, Silicon,

UM4010SME3 技术参数

生命周期:Active包装说明:O-XELF-R2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.65
其他特性:LOW DISTORTION应用:ATTENUATOR; SWITCHING
外壳连接:ISOLATED配置:SINGLE
最大二极管电容:3 pF二极管元件材料:SILICON
最大二极管正向电阻:0.5 Ω二极管类型:PIN DIODE
频带:HIGH FREQUENCY TO S BANDJESD-30 代码:O-XELF-R2
少数载流子标称寿命:10 µs元件数量:1
端子数量:2封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
最大功率耗散:20 W表面贴装:YES
技术:POSITIVE-INTRINSIC-NEGATIVE端子形式:WRAP AROUND
端子位置:ENDBase Number Matches:1

UM4010SME3 数据手册

 浏览型号UM4010SME3的Datasheet PDF文件第2页浏览型号UM4010SME3的Datasheet PDF文件第3页浏览型号UM4010SME3的Datasheet PDF文件第4页浏览型号UM4010SME3的Datasheet PDF文件第5页浏览型号UM4010SME3的Datasheet PDF文件第6页浏览型号UM4010SME3的Datasheet PDF文件第7页 
UM4000 / UM4900  
HIGH POWER PIN DIODES  
KEY FEATURES  
DESCRIPTION  
The UM4000 and UM4900 series features  
Similarly, peak RF voltages can be handled  
well in excess of applied reverse bias voltage.  
Both series have been fully qualified in high  
ƒ Voltage ratings to 1000 V  
high power PIN diodes with long carrier  
lifetimes and thick I-regions. They are  
ƒ
ƒ Power dissipation to 37.5 W  
especially suitable for use in low distortion power UHF phase shifters and megawatt peak-  
ƒ
switches and attenuators, in HF through S  
band frequencies. While both series are  
electrically equivalent, the UM4900 series  
have higher power ratings due to a shorter  
power duplexers, accumulating thousands of  
hours of proven performance. Both types have  
been used in the design of antenna selectors and  
couplers, where inductance and capacitance  
ƒ Series resistance rated at 0.5  
ƒ
ƒ Carrier lifetime greater than 5 µs  
ƒ
thermal path between the chip and package. elements are switched in and out of filter or  
ƒ Non cavity design  
High charge storage and long carrier  
lifetime enable high RF levels to be  
controlled with relatively low bias current.  
cavity networks.  
ƒ
ƒ Thermally matched configuration  
ƒ
ƒ Low capacitance at 0 V bias  
ƒ
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com  
ƒ Low conductance at 0 V bias  
ƒ
ABSOLUTE MAXIMUM RATINGS AT 25º C  
(UNLESS OTHERWISE SPECIFIED)  
ƒ Compatible with automatic  
insertion equipment  
Package  
A
Condition  
UM4000  
PD  
UM4900  
PD  
θ
θ
25 OC Pin Temperature  
25 W  
6 OC/W 37.5 W  
4 OC/W  
B & E ½ in. total length to 25 OC Contact  
12 W 12.5 OC/W 12 W 12.5 OC/W  
Free Air  
2.5 W  
25 W  
2.5 W  
APPLICATIONS/BENEFITS  
C
D
25 OC Stud Temperature  
25 OC Stud Temperature  
25 OC End Cap Temperature  
1 us pulse (Single)  
6 OC/W 37.5 W  
4 OC/W  
6 OC/W  
ƒ Isolated stud package available  
18.75 W 8OC/W 25 W  
ƒ
ƒ Surface mount package available  
SM  
All  
20 W  
7OC/W  
N/A  
100 kW  
100 kW  
VOLTAGE RATINGS  
Reverse Voltage @ 10 uA  
UM4000  
UM4001  
UM4002  
-
UM4006  
UM4010  
UM4900  
UM4901  
UM4902  
-
UM4906  
-
100  
200  
400  
600  
1000  
Style “B”  
Style “SM”  
Copyright 2005  
Microsemi  
Page 1  
Rev. 0, 2005-07-14  

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