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UM2310S PDF预览

UM2310S

更新时间: 2024-11-25 23:39:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
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描述
PIN Diode

UM2310S 数据手册

 浏览型号UM2310S的Datasheet PDF文件第2页浏览型号UM2310S的Datasheet PDF文件第3页浏览型号UM2310S的Datasheet PDF文件第4页浏览型号UM2310S的Datasheet PDF文件第5页 
580 Pleasant St.  
Watertown, MA 02472  
PH: (617) 926-0404  
FAX: (617) 924-1235  
UM2300  
SERIES  
Features  
PIN DIODE  
SWITCH  
·
·
·
·
·
LF band (100 KHz) PIN  
Long Lifetime (80 ms typ.)  
High Power (1 KW CW)  
Low Loss (0.2 dB)  
· High Isolation (35 dB)  
· Very Low Distortion (IP3 = > 60 dBm)  
Voltage Ratings to 1000 V  
Description  
TYPICAL CAPACITANCE vs REVERSE VOLTAGE  
130  
120  
110  
100  
90  
UM2300 Series PIN diodes are designed for transmit /  
receive switch and attenuator application in LF band  
( 100 KHz ) and above. As series configured switches,  
these long lifetime (80 mS typ) diodes can control up to  
2.5 KW CW in a 50 ohm system. In MF band, insertion  
loss is less than 0.2 dB and isolation is greater than  
35 dB (‘off ’state).  
100 KHz  
200 KHz  
400 KHz  
80  
70  
60  
50  
40  
1 MHz  
30  
20  
The UM2300 series offers the lowest distortion perform-  
ance in both transmit & receive modes. Less than 10  
mA forward bias is required to obtain an IP3 of 60 dBm  
at 150 KHz with 1 watt per tone. The forward biased  
resistance/reactance vs. frequency characteristics are  
flat down to 10 KHz. Capacitance vs. reverse bias volt-  
age characteristic is flat down to 1 MHz.  
2 MHz  
4 MHz  
10  
0
0
20  
40  
60  
80 100 120 140 160 180 200  
Vr (VOLTS)  
Voltage Ratings (25°C)  
Reverse Voltage ( VR )  
DEVICE  
In attenuator configurations, the UM2300 produces  
extremely low distortion at low values of attenuator  
control current, & very low insertion loss ( 0.2 dB) in  
the ‘ 0 dB ’ attenuator state.  
@ IR = 10 mA  
100 VOLTS............ UM2301  
200 VOLTS............ UM2302  
400 VOLTS............ UM2304  
600 VOLTS............ UM2306  
800 VOLTS............ UM2308  
1000 VOLTS............ UM2310  
Electrical Specifications (25°C)  
Test  
Diode Resistance RS  
Capacitance CT  
Reverse Current IR  
Carrier Lifetime t  
IP3  
Min.  
Typ.  
0.3  
15  
Max.  
0.4  
20  
Units  
W
pF  
mA  
ms  
Conditions  
F1 = 1 MHz, 100 mA  
F2 = 1 MHz, 100 V  
@ Rated Voltage  
If = 10 mA / 100 V  
2 WATT total, If = 25 mA  
F1 = 0.999 MHz, F2 = 1.001 MHz  
1.0 WATT/ tone  
10  
60  
50  
80  
60  
dBm  
Thermal Resistance  
1.0  
°C / W  
25°C Stud Temperature  
MSCOXXXA 12-14-98  
DSW UM2300 <->(34989)  

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