UM2300
Features
PIN DIODE
SWITCH
•
•
•
•
•
LF band (100 KHz) PIN
Long Lifetime (80 µs typ.)
High Power (1 KW CW),
Low Loss (0.2 dB),
• High Isolation (35 dB)
• Very Low Distortion (IP3 = > 60 dBm)
Voltage Ratings to 1000 V
Description
TYPICAL CAPACITANCE vs REVERSE VOLTAGE
UM2300 Series PIN diodes are designed for transmit /
receive switch and attenuator application in LF band
( 100 KHz ) and above. As series configured switches,
these long lifetime (80 µS typ) diodes can control up to
2.5 KW CW in a 50 ohm system. In MF band, insertion
loss is less than 0.2 dB and isolation is greater than
35 dB (‘off ’state).
130
120
110
100
90
80
70
60
50
100 KHz
200 KHz
400 KHz
40
30
1 MHz
The UM2300 series offers the lowest distortion perform-
ance in both transmit & receive modes. Less than 10
mA forward bias is required to obtain an IP3 of 60 dBm
at 150 KHz with 1 watt per tone. The forward biased
resistance/reactance vs. frequency characteristics are
flat down to 10 KHz. Capacitance vs. reverse bias volt-
age characteristic is flat down to 1 MHz.
20
10
0
2 MHz
4 MHz
0
20
40
60
80 100 120 140 160 180 200
Vr (VOLTS)
Voltage Ratings (25°C)
Reverse Voltage ( VR )
DEVICE
In attenuator configurations, the UM2300 produces
extremely low distortion at low values of attenuator
control current, & very low insertion loss ( 0.2 dB) in
the ‘ 0 dB ’ attenuator state.
@ IR = 10 µA
100 VOLTS............ UM2301
200 VOLTS............ UM2302
400 VOLTS............ UM2304
600 VOLTS............ UM2306
800 VOLTS............ UM2308
1000 VOLTS............ UM2310
Electrical Specifications (25°C)
Test
Diode Resistance RS
Capacitance CT
Reverse Current IR
Carrier Lifetime τ
IP3
Min.
Typ.
0.3
15
Max.
0.4
20
Units
Conditions
F1 = 1 MHz, 100 mA
F2 = 1 MHz, 100 V
Ω
pF
10
@ Rated Voltage
µA
60
50
80
60
If = 10 mA / 100 V
µs
dBm
2 WATT total, If =25 mA
F1 =0.999 MHz, F2 =1.001 MHz
1.0 WATT/ tone
Thermal Resistance
1.0
°C / W
25°C Stud Temperature
MSCOXXXA 10-26-04
DSW UM2300 <A
>(34989)