UM2100
ATTENUATOR AND POWER PIN DIODES (2-30 MHz)
KEY FEATURES
DESCRIPTION
HF band (2-30 MHz) PIN
Long Lifetime (25µs typical)
High Power ( 1kW, CW)
High Isolation (32dB)
UM2100 Series PIN diodes are designed for 60 dBm at 300 kHz with 1 watt per tone. The
transmit/receive switch and attenuator
applications in HF band (2-30MHz) and
forward biased resistance/reactance vs. frequency
characteristics are flat down to 10 kHz. The
below. As series configured switches, these capacitance vs. reverse bias voltage characteristic
long lifetime (25µs typical) diodes can
control up to 2.5 kW, CW in a 50 ohm
system. In HF band, insertion loss is less
than 0.25dB and isolation is greater than
32dB (off-state).
is flat down to 2 MHz.
In attenuator configuration, the UM2100
produces extremely low distortion at low values
of attenuator control current, and very low
insertion loss (0.2dB) in the “0dB” attenuator
state.
Low Loss (0.25dB)
Very Low Distortion (IP3=60dBm)
Voltage ratings to 1000 V
The UM2100 series offers the lowest
distortion performance in both the transmit
and receive modes. Less than 50 mA
forward bias is requires to obtain an IP3 of
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Package
A
Condition
PD
θ
APPLICATIONS/BENEFITS
25 OC Pin Temperature
25 W
6 OC/W
Isolated stud package available
Surface mount package available
RoHS compliant packaging
available: use UMX2101B, etc.
B & E ½ in. total length to 25 OC Contact
12 W
12.5 OC/W
Free Air
2.5 W
C
D
25 OC Stud Temperature
25 OC Stud Temperature
25 OC End Cap Temperature
25 W
18.75 W
15W
6 OC/W
8 OC/W
10 OC/W
SM
All
1 us pulse (Single)
100 kW
-65 OC to + 175 OC
OPERATING AND STORAGE
TEMPERATURE RANGE
VOLTAGE RATINGS
Reverse Voltage @ 10 uA
100V
200V
400V
600V
800V
1000V
UM2101
UM2102
UM2104
UM2106
UM2108
UM2110
Copyright 2005
Microsemi
Page 1
Rev. 0, 2005-12-13