Datasheet > ULBM2SL_07

ULBM2SL_07

更新时间： 2024-02-15 14:56:07

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	17K
描述
NPN SILICON RF POWER TRANSISTOR

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ULBM2SL_07 数据手册

ULBM2SL

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI ULBM2SL is Designed for

Class C, FM Land Mobile Applications

up to 470 MHz.

PACKAGE STYLE .280 4L PILL

FEATURES:

• Common Emitter

• P_G= 10 dB at 2.0 W/470 MHz

• Omnigold™ Metalization System

ØB

MAXIMUM RATINGS

ØC

0.75 A

36 V

I_C

V_CBO

V_CER

V_CES

V_EBO

16 V

36 V

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

4.0 V

.220 / 5.59

.230 / 5.84

1.055 / 26.80

.285 / 7.24

.006 / 0.15

.060 . 1.52

.130 / 3.30

.275 / 6.99

.004 / 0.10

.050 / 1.27

.118 / 3.00

5.0 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

35.0 °C/W

P_DISS

T_J

T_STG

θ_JC

ORDER CODE: ASI10678

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 25 mA

I_C= 5.0 mA

I_E= 1.0 mA

V_CB= 15 V

V_CE= 10 V

V_CE= 5.0 V

BV_CES

BV_EBO

I_CBO

4.0

1.0

0.5

200

---

I_CER

R_BE= 80 Ω

I_C= 100 mA

h_FE

_CB= 7.5 V

f = 1.0 MHz

f = 470 MHz

C_ob

P_G

V_CC= 12.5 V

P_OUT= 2.0 W

η_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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