Datasheet > ULBM10_07

ULBM10_07

更新时间： 2024-02-10 16:23:13

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
2页	21K
描述
NPN SILICON RF POWER TRANSISTOR

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ULBM10_07 数据手册

ULBM10

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI ULBM10 is a gold metallized

RF power transistor designed for 12.5

V, Class-C application in 450-512 MHz

frequency range. It utilizes emitter

ballasting for high reliability and

ruggedness.

PACKAGE STYLE .280 4L STUD

45°

FEATURES:

• Common Emitter, Class-C 12.5 V

• P_G= 7.0 dB at 10 W/470 MHz

• Omnigold™ Metalization System

MAXIMUM RATINGS

#8-32 UNC

2.5 A

36 V

I_C

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

V_CBO

V_CEO

V_CES

V_EBO

P_DISS

T_J

1.010 / 25.65

.220 / 5.59

.270 / 6.86

.003 / 0.08

.117 / 2.97

1.055 / 26.80

.230 /5.84

.285 / 7.24

.007 / 0.18

.137 / 3.48

16 V

36 V

.572 / 14.53

.130 / 3.30

4.0 V

58 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

3.0 °C/W

.245 / 6.22

.255 / 6.48

.640 / 16.26

.175 / 4.45

.275 / 6.99

.217 / 5.51

.285 / 7.24

T_STG

θ_JC

ORDER CODE: ASI10682

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 20 mA

I_C= 25 mA

I_E= 10 mA

BV_CES

BV_EBO

I_CEO

4.0

_CB= 15 V

_CE= 10 V

2.0

3.0

150

---

I_CES

V_CE= 5.0 V

I_C= 1.0 A

h_FE

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. C

1/2

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