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UL62H1616ATK15 PDF预览

UL62H1616ATK15

更新时间: 2023-01-03 08:24:11
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器光电二极管
页数 文件大小 规格书
10页 195K
描述
Standard SRAM, 64KX16, 15ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

UL62H1616ATK15 数据手册

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UL62H1616A  
Low Voltage Automotive Fast 64K x 16 SRAM  
Features  
Description  
! 65536 x 16 bit static CMOS RAM  
! 15, 20 and 35 ns Access Time  
! Common data inputs and  
data outputs  
The UL62H1616A is a static RAM  
change leads to a new Read cycle.  
In a Read cycle, the data outputs  
are activated by the falling edge of  
G. If LB = L the data lower byte will  
be available at the outputs DQ0-  
DQ7, on UB = L the data upper  
byte appear at the outputs DQ8-  
DQ15. After the address change,  
the data outputs go High-Z until the  
new information is available. The  
data outputs have no preferred  
state. The Read cycle is finished by  
the falling edge of W, or by the  
rising edge of E, respectively.  
manufactured using a CMOS pro-  
cess technology with the following  
operating modes:  
! Three-state outputs  
- Lower / Upper Byte Read  
- Word Read  
! Standby current < 150 µA  
at 125°C  
- Lower / Upper Byte Write  
- Word Write  
! TTL/CMOS-compatible  
! Power supply voltage 3.3 V  
! Operating temperature range  
K-Type:-40 °C to 85 °C  
- Standby  
- Data Retention  
The memory array is based on a  
6-Transistor cell.  
A-Type:-40 °C to 125 °C  
! QS 9000 Quality Standard  
! ESD protection > 2000 V  
(MIL STD 883C M3015.7)  
! Latch-up immunity >100 mA  
! Package: TSOP II 44 (400 mil)  
The circuit is activated by the fal-  
ling edge of E. The address and  
control inputs open simultaneously.  
According to the information of W  
and G, the data inputs, or outputs,  
are active. During the active state  
E = L and W = H each address  
Data retention is guaranteed down  
to 2 V. With the exception of E, all  
inputs consist of NOR gates, so  
that no pull-up/pull-down resistors  
are required.  
Pin Configuration  
Pin Description  
BGA  
A5  
1
2
3
4
5
6
7
8
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A4  
A3  
A2  
A1  
A0  
A6  
A7  
G
UB  
LB  
DQ15  
DQ14  
DQ13  
DQ12  
VSS  
VCC  
DQ11  
DQ10  
Signal Name Signal Description  
LB  
G
A0  
A3  
A1  
A4  
A6  
A7  
n.c.  
A2  
E
A0 - A15  
Address Inputs  
DQ8  
UB  
DQ0  
DQ2  
DQ0 - DQ15 Data In/Out  
DQ9 DQ10 A5  
VSS DQ11 n.c.  
VCC DQ12 n.c.  
DQ1  
Chip Enable  
E
E
DQ0  
DQ1  
DQ2  
DQ3  
VCC  
VSS  
DQ4  
DQ5  
DQ6  
DQ7  
W
A15  
A14  
A13  
A12  
n.c.  
Output Enable  
Write Enable  
G
W
DQ3 VCC  
9
n.c. DQ4 VSS  
UB  
LB  
VCC  
VSS  
n.c.  
Upper Byte Enable  
Lower Byte Enable  
Power Supply Voltage  
Ground  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
DQ14 DQ13 A14 A15 DQ5 DQ6  
TSOPII  
DQ15 n.c.  
n.c. A8  
A12 A13  
A9 A10  
W
DQ7  
n.c.  
A11  
not connected  
DQ9  
DQ8  
Top View  
n.c.  
A8  
A9  
A10  
A11  
n.c.  
Top View  
April 21, 2004  
1

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