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UHVR112 PDF预览

UHVR112

更新时间: 2024-11-30 20:08:19
品牌 Logo 应用领域
EIC 二极管
页数 文件大小 规格书
2页 148K
描述
Rectifier Diode,

UHVR112 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
二极管类型:RECTIFIER DIODEBase Number Matches:1

UHVR112 数据手册

 浏览型号UHVR112的Datasheet PDF文件第2页 
TH97/10561QM  
TW00/17276EM  
IATF 0060636  
SGS TH07/1033  
HIGH VOLTAGE ULTRAFAST  
RECTIFIER DIODE  
UHVR112  
DO - 41  
PRV : 1200 Volts  
Io : 1.0 Ampere  
1.00 (25.4)  
FEATURES :  
0.108 (2.74)  
MIN.  
0.078 (1.99)  
* Glass passivated junction chip  
* High surge current capability  
* High reliability  
0.205 (5.20)  
0.161 (4.10)  
* Low reverse current  
* Low forward voltage drop  
* Pb Free / RoHS Compliant  
1.00 (25.4)  
0.034 (0.86)  
MIN.  
0.028 (0.71)  
MECHANICAL DATA :  
* Case : DO-41 Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
Dimensions in inches and ( millimeters )  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 0.34 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
RATING  
SYMBOL  
VALUE  
UNIT  
VRRM  
VRMS  
VDC  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
1200  
840  
V
V
V
A
Maximum DC Blocking Voltage  
1200  
1.0  
IF(AV)  
Maximum Average Forward Current Ta = 75 °C  
Peak Forward Surge Current  
IFSM  
30  
A
8.3ms Single half sine wave Superimposed  
on rated load (JEDEC Method)  
Maximum Peak Forward Voltage at IF = 1.0 A  
VF  
IR  
2.2  
5.0  
V
μA  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Ta = 25 °C  
IR(H)  
Trr  
Ta = 100 °C  
100  
μA  
Maximum Reverse Recovery Time ( Note 1 )  
Typical Thermal Resistance  
75  
ns  
RӨJA  
TJ  
110  
°C/W  
°C  
Operating Junction Temperature  
Storage Temperature Range  
175  
TSTG  
- 50 to + 175  
°C  
Note :  
(1) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.  
Page 1 of 2  
Rev. 00 : November 13, 2008