Datasheet > UG3KB80G

UG3KB80G

更新时间： 2024-11-14 00:57:35

品牌	Logo	应用领域
辰达行 - MDD		/
页数	文件大小	规格书
2页	1272K
描述
SILICON BRIDGE RECTIFIERS

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中文翻译

获取价格

数据手册

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UG3KB80G 数据手册

UG3KB05G THRU UG3KB100G

SILICON BRIDGE RECTIFIERS

Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes

D3K

FEATURES

Glass passivated die construction

Low forward voltage drop

High current capability

High surge current capability

Designed for surface mount application

Plastic material-UL flammability 94V-O

MECHANICAL DATA

Case: D3K molded plastic body

Terminals: Plated leads solderable per

MIL-STD-202, Method 208

Polarity: As marked on case

Mounting Position: Any

Marking : Type number

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

UG3K

B05G

UG3K UG3K UG3K

B10G B20G B40G B60G B80G B100G

UG3K UG3K UG3K

SYMBOLS

UNITS

MDD Catalog

Number

Maximum repetitive peak reverse voltage

Maximum RMS voltage

VRRM

VRMS

VDC

VOLTS

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC blocking voltage

Maximum average forward output rectified current

at TA=40 C(Note 1)

100

1000

3.0

I(AV)

Amps

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

80.0

Amps

IFSM

Forward voltage per element

@IF=3.0A

Volts

1.1

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

5.0

0.5

TA=125 C

Typical juntion capacitance per leg

RθJA

Typical Thermal Resistance per leg(Note 2)

Operating junction temperature range

C/W

RθJL

TJ,

TSTG

-55 to +150

Note:1. Mounted on glass epoxy PC board with 1.3mm²solder pad.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C..

中文翻译

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