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UG30DPT-E3-45 PDF预览

UG30DPT-E3-45

更新时间: 2024-09-24 08:24:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 92K
描述
Dual Common-Cathode Ultrafast Plastic Rectifier

UG30DPT-E3-45 数据手册

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UG30APT thru UG30DPT  
Vishay General Semiconductor  
Dual Common-Cathode Ultrafast Plastic Rectifier  
FEATURES  
• Glass passivated chip junction  
• Ultrafast recovery time  
• Low switching losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• Solder dip 260 °C, 40 s  
3
2
1
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TO-247AD (TO-3P)  
PIN 2  
CASE  
PIN 1  
PIN 3  
TYPICAL APPLICATIONS  
For use in high frequency rectifier of switching mode  
power supplies, inverters, freewheeling diodes,  
dc-to-dc converters, and other power switching  
application.  
PRIMARY CHARACTERISTICS  
IF(AV)  
30 A  
MECHANICAL DATA  
Case: TO-247AD (TO-3P)  
Epoxy meets UL 94V-0 flammability rating  
VRRM  
IFSM  
trr  
50 V to 200 V  
300 A  
25 ns  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
VF  
0.85 V  
TJ max.  
150 °C  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL UG30APT UG30BPT UG30CPT UG30DPT UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current at TC = 120 °C  
100  
IF(AV)  
30  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
300  
A
Operating and storage temperature range  
TJ, TSTG  
- 65 to + 150  
°C  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL UG30APT UG30BPT UG30CPT UG30DPT UNIT  
15 A  
30 A  
10 A  
1.0  
1.15  
0.85  
Maximum instantaneous  
forward voltage per diode  
VF  
V
TJ = 100 °C  
Maximum DC reverse  
current at rated DC  
blocking voltage per diode  
T
A = 25 °C  
15  
800  
IR  
µA  
TA = 100 °C  
Document Number: 88762  
Revision: 05-Jun-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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