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UG12HT-E3 PDF预览

UG12HT-E3

更新时间: 2024-09-24 15:55:59
品牌 Logo 应用领域
威世 - VISHAY 局域网功效二极管
页数 文件大小 规格书
5页 171K
描述
DIODE 12 A, 500 V, SILICON, RECTIFIER DIODE, TO-220AC, LEAD FREE, PLASTIC PACKAGE-2, Rectifier Diode

UG12HT-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AC
包装说明:R-PSFM-T2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.51
应用:EFFICIENCY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.5 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
JESD-609代码:e3最大非重复峰值正向电流:135 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:12 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):250
认证状态:Not Qualified最大重复峰值反向电压:500 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40Base Number Matches:1

UG12HT-E3 数据手册

 浏览型号UG12HT-E3的Datasheet PDF文件第2页浏览型号UG12HT-E3的Datasheet PDF文件第3页浏览型号UG12HT-E3的Datasheet PDF文件第4页浏览型号UG12HT-E3的Datasheet PDF文件第5页 
UG12HT, UGF12HT, UG12JT, UGF12JT  
VISHAY  
Vishay Semiconductors  
Ultrafast Rectifiers  
ITO-220AC  
TO-220AC  
Major Ratings and Characteristics  
IF(AV  
VRRM  
trr  
)
12 A  
500, 600 V  
30 ns  
tfr  
500 ns  
1.5 V  
VF  
2
2
1
1
Features  
UG12XT  
UGF12XT  
• Glass passivated chip junction  
PIN 1  
PIN 2  
PIN 1  
• Soft recovery characteristics  
CASE  
PIN 2  
• High efficiency, low switching losses  
• Meets MSL level 1, per J-STD-020C  
Mechanical Data  
Case: JEDEC TO-220AC, ITO-220AC  
Terminals: Matte tin plated (E3 Suffix) leads, solder-  
Typical Applications  
For use in high voltage and high frequency power fac- able per J-STD-002B and MIL-STD-750, Method  
tor correction application  
2026  
Mounting Torque: 10 in-lbs Maximum  
Epoxy meets UL-94V-0 Flammability rating  
Maximum Ratings  
(TC = 25 °C unless otherwise noted)  
Parameter  
Test condition  
Symbol  
VRRM  
UG12HT  
500  
UG12JT  
600  
Unit  
V
Maximum repetitive peak  
reverse voltage  
Maximum working reverse  
voltage  
VRWM  
400  
480  
V
Maximum RMS voltage  
VRMS  
VDC  
350  
500  
420  
600  
V
V
A
Maximum DC blocking voltage  
Maximum average forward  
rectified current  
IF(AV)  
12  
Peak forward surge current  
8.3 ms single half sine-wave  
superimposed on rated load  
(JEDEC Method)  
IFSM  
135  
A
°C  
V
Operating junction and storage  
temperature range  
TJ, TSTG  
VISOL  
-55 to +150  
4500(1)  
3500(2)  
1500(3)  
RMS Isolation voltage (UGF  
types only) from terminals to  
heatsink  
with t = 1.0 second, RH 30 %  
Document Number 88758  
02-Nov-04  
www.vishay.com  
1

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