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UFT15-28S PDF预览

UFT15-28S

更新时间: 2024-09-11 22:41:47
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 20K
描述
NPN SILICON RF POWER TRANSISTOR

UFT15-28S 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.65最大集电极电流 (IC):10 A
基于收集器的最大容量:80 pF集电极-发射极最大电压:35 V
配置:SINGLE最小直流电流增益 (hFE):10
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CRPM-F4
元件数量:1端子数量:4
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:POST/STUD MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):140 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管元件材料:SILICON
Base Number Matches:1

UFT15-28S 数据手册

  
UFT15-28S  
NPN SILICON RF POWER TRANSISTOR  
PACKAGE STYLE .380 4L STUD  
DESCRIPTION:  
A
.112x45°  
The ASI UFT15-28S is Designed for  
B
FEATURES:  
ØC  
·
·
I
D
H
· Omnigold™ Metalization System  
J
G
#8-32 UNC-2A  
F
MAXIMUM RATINGS  
E
10 A  
60 V  
IC  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
.220 / 5.59  
.980 / 24.89  
.370 / 9.40  
.004 / 0.10  
.320 / 8.13  
.100 / 2.54  
.450 / 11.43  
.090 / 2.29  
.155 / 3.94  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
VCB  
VCE  
PDISS  
TJ  
.385 / 9.78  
.007 / 0.18  
.330 / 8.38  
.130 / 3.30  
.490 / 12.45  
.100 / 2.54  
.175 / 4.45  
.750 / 19.05  
35 V  
140 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
1.5 OC/W  
J
TSTG  
qJC  
ORDER CODE: ASI10665  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCEO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 50 mA  
IC = 50 mA  
IE = 10 mA  
VE = 28 V  
35  
V
BVCER  
BVEBO  
ICES  
RBE = 10 W  
60  
V
4.0  
V
5
mA  
---  
hFE  
VCE = 5.0 V  
IC = 1.0 A  
10  
100  
Cob  
VCB = 28 V  
f = 1.0 MHz  
80  
pF  
VCE = 25 V  
ICQ = 3.2 A  
f = 225 MHz  
Snd. = -7 dB  
PGE  
13.5  
14.5  
dB  
PREF = 16 W  
Vision = -8 dB  
Side Band = -16 dB  
IMD3  
-55  
dBc  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
1/1  
Specifications are subject to change without notice.  

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