UFP60C20D thru UFP60C60D
Pb
UFP60C20D/UFP60C40D/UFP60C60D
Pb Free Plating Product
60 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers
TO-3PN/TO-3PB
Unit:inch(mm)
Features
※ ThinkiSemi latest&matured process FRD/FRED
Bottom Side Metal Heat Sink(Case)
※ Fast switching for high efficiency
※ Low forward voltage drop
※ High current capability
※ Low reverse leakage current
※ High surge current capability
Application
※ Automotive Inverters and Solar Inverters
※ Car Audio Amplifiers and Sound Device Systems
※ Plating Power Supply,Motor Control,UPS and SMPS etc.
Mechanical Data
※ Case: Open Metal Package TO-3PN/TO-3PB
※ Epoxy: UL 94V-0 rate flame retardant
※ Terminals: Solderable per MIL-STD-202 method 208
※ Polarity: As marked on diode body
※ Mounting position: Any
Case
Case
Case
Case
※ Weight: 6.0 gram approximately
Doubler
Tandem Polarity
Suffix "D"
Series
Tandem Polarity
Suffix "S"
Negative
Common Anode
Suffix "A"
Positive
Common Cathode
Suffix "C"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
UFP60C10D
UFP60C20D
UFP60C30D
UFP60C40D
UFP60C50D
UFP60C60D
PARAMETER
SYMBOL
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current Tc=100°C
60
IF(AV)
IFSM
VF
A
A
V
(Total Device 2x30A=60A)
Peak Forward Surge Current, 8.3ms single Half
sine-wave superimposed on rated load (JEDEC
600
method)
(Per Diode/Per Leg)
Maximum Instantaneous Forward Voltage
@30A
0.85-0.95
1.00-1.25
1.25-1.50
(Per Diode/Per Leg)
Maximum DC Reverse Current @TJ=25°C
At Rated DC Blocking Voltage @TJ=125°C
1.0
5.0
μA
μA
IR
Maximum Reverse Recovery Time (Note1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
25-50
300
Trr
CJ
nS
pF
0.8
RθJC
°C/W
Operating Junction and Storage
Temperature Range
-55 to +175
TJ,TSTG
°C
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.
Page 1/3
http://www.thinkisemi.com.tw/
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.