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UFMMTA42 PDF预览

UFMMTA42

更新时间: 2024-11-21 20:10:11
品牌 Logo 应用领域
捷特科 - ZETEX 光电二极管晶体管
页数 文件大小 规格书
4页 129K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

UFMMTA42 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.24最大集电极电流 (IC):0.2 A
基于收集器的最大容量:8 pF集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
参考标准:CECC50002-243表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
VCEsat-Max:0.5 VBase Number Matches:1

UFMMTA42 数据手册

 浏览型号UFMMTA42的Datasheet PDF文件第2页浏览型号UFMMTA42的Datasheet PDF文件第3页浏览型号UFMMTA42的Datasheet PDF文件第4页 
FMMTA42  
SOT23 NPN Silicon planar high voltage transistor  
Device marking  
FMMTA42 - 3E  
Complementary types  
FMMTA92  
Absolute maximum ratings  
Parameter  
Symbol  
FMMTA42  
Unit  
Collector-base voltage  
V
V
V
300  
V
CBO  
CEO  
EBO  
Collector-emitter voltage  
Emitter-base voltage  
300  
V
V
5
200  
Continuous collector current  
I
mA  
mW  
°C  
C
Power dissipation at T  
=25°C  
P
330  
amb  
tot  
Operating and storage temperature range  
T :T  
-55 to +150  
j
stg  
Electrical characteristics (at T  
= 25°C).  
amb  
Conditions  
Collector-base breakdown  
voltage  
Collector-emitter breakdown V  
voltage  
Emitter-base breakdown  
voltage  
Collector cut-off current  
V
300  
300  
6
V
V
V
I =100µA, I =0  
C E  
(BR)CBO  
(BR)CEO  
(BR)EBO  
CBO  
(*)  
I =1mA, I =0  
C
B
V
I =100µA, I =0  
E C  
I
I
0.1  
0.1  
µA  
µA  
µA  
µA  
V
V
V
V
V
=200V, I =0  
E
CB  
CB  
EB  
EB  
=160V, I =0  
E
Emitter cut-off current  
=6V, I =0  
EBO  
C
=4V, I =0  
C
(*)  
(*)  
Collector-emitter saturation  
voltage  
Base-emitter saturation  
voltage  
Static forward  
current transfer  
ratio  
V
V
h
0.5  
0.9  
I =20mA, I =2mA  
CE(sat)  
BE(sat)  
C
B
V
I =20mA, I =2mA  
C
B
(*)  
(*)  
25  
40  
40  
50  
I =1mA, V =10V  
FE  
C
CE  
I =10mA, V =10V  
C
CE  
(*)  
I =30mA, V =10V  
C
CE  
Transition frequency  
f
MHz  
pF  
I =10mA, V =20V  
T
C
CE  
f=20MHz  
Output capacitance  
C
6
V
=20V, f=1MHz  
CB  
obo  
NOTES:  
Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%.  
Issue 6 - December 2007  
© Zetex Semiconductors plc 2007  
1
www.zetex.com  

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