Datasheet > UFMMT415

UFMMT415

更新时间： 2024-01-18 06:03:08

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
2页	97K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon

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UFMMT415 数据手册

SOT23 NPN SILICON PLANAR

AVALANCHE TRANSISTOR

FMMT415

FMMT417

ISSUE 4 - OCTOBER 1995

✪

FEATURES

Specifically designed for Avalanche mode operation

60A Peak Avalanche Current (Pulse width=20ns)

APPLICATIONS

Laser LED drivers

Fast edge generation

High speed pulse generators

PARTMARKING DETAIL

FMMT415 415

FMMT417 417

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

FMMT415 FMMT417

UNIT

Collector-Base Voltage

260

100

320

100

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current (Pulse Width=20ns)

Power Dissipation

500

I_CM

P_tot

330

°C

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at T

T_j:T_stg

-55 to +150

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base

Breakdown

Voltage

FMMT415 V_(BR)CES

260

I_C=1mA

T_amb= -55 to +150°C

FMMT417

320

100

I_C=1mA

Collector-Emitter Breakdown

Voltage

V_CEO(sus)

I_C=100µA

Emitter-Base Breakdown Voltage V_(BR)EBO

I_E=10µA

Collector Cut-Off Current

I_CBO

0.1

V_CB=180V

V_CB=180V,

T_amb=100°C

µA

Emitter Cut-Off Current

I_EBO

0.1

0.5

V_EB=4V

µA

Collector-Emitter Saturation

Voltage

V_CE(sat)

I_C=10mA, I_B=1mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

I_SB

h_FE

f_T

0.9

I_C=10mA, I_B=1mA*

Current in Second Breakdown

(Pulsed)

V_C=200V, C_CE=620pF

V_C=250V, C_CE=620pF

Static Forward Current Transfer

Ratio

I_C=10mA, V_CE=10V*

Transition Frequency

MHz I_C=10mA, V_CE=20V

f=20MHz

Collector-Base Capacitance

C_cb

V_CB=20V, I_E=0

f=100MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

3 - 104

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