是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
风险等级: | 5.64 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (Abs) (ID): | 0.185 A | 最大漏极电流 (ID): | 0.185 A |
最大漏源导通电阻: | 120 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.5 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UF601Q | UTC |
获取价格 |
N-CHANNEL DEPLETION-MODE POWER MOSFET | |
UF601QG-AE2-R | UTC |
获取价格 |
N-CHANNEL DEPLETION-MODE POWER MOSFET | |
UF601QG-AE3-R | UTC |
获取价格 |
N-CHANNEL DEPLETION-MODE POWER MOSFET | |
UF602 | DAESAN |
获取价格 |
CURRENT 6.0 Amperes VOLTAGE 50 to 1000 Volts | |
UF602 | PANJIT |
获取价格 |
ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes) | |
UF602 | TRSYS |
获取价格 |
ULTRAFAST SWITCHING RECTIFIER | |
UF602 | SUNMATE |
获取价格 |
6A plug-in fast recovery diode 200V R-6 series | |
UF602G | PANJIT |
获取价格 |
GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT | |
UF603 | DAESAN |
获取价格 |
CURRENT 6.0 Amperes VOLTAGE 50 to 1000 Volts | |
UF603 | SUNMATE |
获取价格 |
6A plug-in fast recovery diode 300V R-6 series |