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UF5407G PDF预览

UF5407G

更新时间: 2024-11-24 14:54:07
品牌 Logo 应用领域
WON-TOP 二极管
页数 文件大小 规格书
4页 42K
描述
Axial

UF5407G 技术参数

生命周期:Active零件包装代码:DO-201AD
包装说明:O-PALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.09
其他特性:HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
最大重复峰值反向电压:800 V最大反向恢复时间:0.075 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

UF5407G 数据手册

 浏览型号UF5407G的Datasheet PDF文件第2页浏览型号UF5407G的Datasheet PDF文件第3页浏览型号UF5407G的Datasheet PDF文件第4页 
®
UF5400G – UF5408G  
3.0A GLASS PASSIVATED ULTRAFAST DIODE  
WON-TOP ELECTRONICS  
Features  
Glass Passivated Die Construction  
Low Forward Voltage Drop  
High Surge Current Capability  
High Reliability  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
A
B
A
Mechanical Data  
C
Case: DO-201AD, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 1.2 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
D
DO-201AD  
Min  
Dim  
A
Max  
25.4  
B
7.20  
9.50  
1.30  
5.30  
C
1.20  
D
4.80  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UF  
UF  
UF  
UF  
UF  
UF  
UF  
UF  
Characteristic  
Symbol  
Unit  
5400G 5401G 5402G 5403G 5404G 5406G 5407G 5408G  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
300  
210  
400  
280  
600  
420  
800 1000  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
560  
1.7  
700  
V
A
Average Rectified Output Current (Note 1) @TA = 55°C  
3.0  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
150  
A
Forward Voltage  
@IF = 3.0A  
VFM  
IRM  
1.0  
1.3  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
10  
µA  
100  
Reverse Recovery Time (Note 2)  
trr  
50  
45  
75  
36  
nS  
pF  
Typical Junction Capacitance (Note 3)  
CJ  
Typical Thermal Resistance Junction to Ambient (Note 1)  
Typical Thermal Resistance Junction to Lead (Note 1)  
RθJA  
RθJL  
20  
8.5  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-65 to +150  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.  
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
3. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

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