Datasheet > UF5402G

UF5402G

更新时间： 2023-12-06 20:06:28

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UF5402G 数据手册

UF5400G – UF5408G

3.0A GLASS PASSIVATED ULTRAFAST DIODE

WON-TOP ELECTRONICS

Features



Glass Passivated Die Construction



Low Forward Voltage Drop

High Surge Current Capability

High Reliability

Ideally Suited for Use in High Frequency

SMPS, Inverters and As Free Wheeling Diodes

Mechanical Data



Case: DO-201AD, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 1.2 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

DO-201AD

Min

Dim

Max

—



25.4

7.20

9.50

1.30

5.30

1.20

4.80

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

Unit

5400G 5401G 5402G 5403G 5404G 5406G 5407G 5408G

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100

200

140

300

210

400

280

600

420

800 1000

RMS Reverse Voltage

VR(RMS)

560

1.7

700

Average Rectified Output Current (Note 1) @T_A= 55°C

3.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on

Rated Load (JEDEC Method)

IFSM

150

Forward Voltage

@I_F= 3.0A

VFM

IRM

1.0

1.3

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

µA

100

Reverse Recovery Time (Note 2)

t_rr

Typical Junction Capacitance (Note 3)

Typical Thermal Resistance Junction to Ambient (Note 1)

Typical Thermal Resistance Junction to Lead (Note 1)

R^θJA

RθJL

8.5

°C/W

°C

Operating and Storage Temperature Range

TJ, TSTG

-65 to +150

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.

2. Measured with I_F= 0.5A, I_R= 1.0A, I_RR= 0.25A.

3. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

Revision: September, 2012

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