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UF4006-G PDF预览

UF4006-G

更新时间: 2024-01-23 23:52:56
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上华 - COMCHIP /
页数 文件大小 规格书
3页 77K
描述
Ultra Fast Recovery Rectifiers

UF4006-G 技术参数

生命周期:Obsolete零件包装代码:DO-41
包装说明:DO-41SP, 2 PIN针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.05
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-41JESD-30 代码:O-XALF-W2
JESD-609代码:e0元件数量:1
端子数量:2最大输出电流:1 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:800 V最大反向恢复时间:0.075 µs
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

UF4006-G 数据手册

 浏览型号UF4006-G的Datasheet PDF文件第2页浏览型号UF4006-G的Datasheet PDF文件第3页 
Ultra Fast Recovery Rectifiers  
UF4001-G Thru. UF4007-G  
Voltage: 50 to 1000 V  
Current: 1.0 A  
RoHS Device  
Features  
-Low cost construction.  
DO-41  
-Fast switching for high efficiency.  
-Low reverse leakage.  
-High forward surge current capability.  
1.0(25.40) Min.  
-High soldering temperature guarantee: 260°C/10  
seconds, 0.375”(9.5mm) lead length at 5lbs(2.3kg)  
tension.  
0.205(5.20)  
0.160(4.20)  
Mechanical data  
0.107(2.70)  
0.080(2.00)  
-Case: transfer molded plastic, DO-41  
-Epoxy: UL 94V-0 rate flame retardant  
-Polarity: Indicated by cathode band  
1.0(25.40) Min.  
-Lead: Plated axial lead, solderable per MIL-STD-  
202E, method 208C  
0.034(0.90)  
0.028(0.70)  
-Mounting position: Any  
-Weight: 0.33 grams  
Dimensions in inches and (millimeter)  
Maximum Ratings and Electrical Characteristics  
Ratings at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UF4001  
-G  
UF4002  
-G  
UF4003  
-G  
UF4004  
-G  
UF4005  
-G  
UF4006  
-G  
UF4007  
-G  
Symbol  
Parameter  
Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
RRM  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
V
RMS  
V
DC  
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current  
I
(AV)  
A
A
1.0  
30  
0.375"(9.5mm) lead length @T =55°C  
A
Peak forward surge current, 8.3ms single  
half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
V
Maximum forward voltage at 1.0A DC  
V
F
1.0  
50  
1.7  
75  
Maximum reverse current  
at rated DC blocking voltage  
T
A
=25°C  
=125°C  
10  
50  
μA  
IR  
T
A
Maximum reverse recovery time (Note 3)  
Typical junction capacitance (Note 1)  
Typical thermal resistance (Note 2)  
Operating temperature range  
Storage temperature range  
NOTES:  
nS  
PF  
trr  
C
J
15  
°C/W  
°C  
R
θJA  
60  
T
J
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
1. Measured at 1.0MHz and applied reverse voltage of 4.0Volts.  
2. Thermal resistance from junction to ambient at 0.375"(9.5mm) lead length, P.C. board mounted.  
3. Reverse recovery time test condition: IF=0.5A, IR=1.0A, IRR=0.25A.  
REV:B  
Page 1  
QW-BU006  
Comchip Technology CO., LTD.  

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