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UF4003G PDF预览

UF4003G

更新时间: 2024-11-21 14:52:19
品牌 Logo 应用领域
WON-TOP 二极管
页数 文件大小 规格书
4页 41K
描述
Axial

UF4003G 技术参数

生命周期:Active零件包装代码:DO-41
包装说明:O-PALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.04
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
最大重复峰值反向电压:200 V最大反向恢复时间:0.05 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

UF4003G 数据手册

 浏览型号UF4003G的Datasheet PDF文件第2页浏览型号UF4003G的Datasheet PDF文件第3页浏览型号UF4003G的Datasheet PDF文件第4页 
®
UF4001G – UF4007G  
1.0A GLASS PASSIVATED ULTRAFAST DIODE  
WON-TOP ELECTRONICS  
Features  
Glass Passivated Die Construction  
Low Forward Voltage Drop  
High Surge Current Capability  
High Reliability  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
A
B
A
Mechanical Data  
C
Case: DO-41, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 0.35 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
D
DO-41  
Dim  
A
Min  
25.4  
4.06  
0.71  
2.00  
Max  
B
5.21  
0.864  
2.72  
C
D
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UF  
UF  
UF  
UF  
UF  
UF  
UF  
Characteristic  
Symbol  
Unit  
4001G 4002G 4003G 4004G 4005G 4006G 4007G  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
1.0  
V
A
Average Rectified Output Current (Note 1) @TA = 55°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
30  
A
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
1.0  
1.3  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
5.0  
100  
µA  
Reverse Recovery Time (Note 2)  
trr  
50  
20  
75  
15  
nS  
pF  
Typical Junction Capacitance (Note 3)  
CJ  
Typical Thermal Resistance Junction to Ambient (Note 1)  
Typical Thermal Resistance Junction to Lead (Note 1)  
RθJA  
RθJL  
60  
15  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-65 to +150  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.  
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
3. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

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