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UF4002(G) PDF预览

UF4002(G)

更新时间: 2024-02-21 19:18:33
品牌 Logo 应用领域
鲁光 - LGE 二极管IOT
页数 文件大小 规格书
2页 182K
描述
暂无描述

UF4002(G) 技术参数

生命周期:Obsolete零件包装代码:DO-41
包装说明:DO-41SP, 2 PIN针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.12
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-PALF-W2JESD-609代码:e0
元件数量:1端子数量:2
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:0.05 µs表面贴装:NO
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIALBase Number Matches:1

UF4002(G) 数据手册

 浏览型号UF4002(G)的Datasheet PDF文件第2页 
UF4001-UF4007  
1.0AMP. Glass Passivated High Efficient Plastic Rectifiers  
DO-41 / DO-204AL  
Features  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V0  
O
1.0 ampere operation at TA=55 C with no thermal  
runaway  
Glass passivated chip junction  
Low cost  
Ultrafast recovery time for high efficiency  
High efficiency, low VF  
Low leakage current  
High surge current capability  
Mechanical Data  
Case: JEDEC DO-204AL molded plastic body over  
passivated chip  
Polarity: Color band denotes cathode  
Mounting Position: Any  
Dimensions in inches and (millimeters)  
High temperature soldering guaranteed:  
o
260 C/10 seconds/.375”,(9.5mm) lead  
lengths at 5 lbs., (2.3kg) tension  
Weight: 0.35 gram  
Maximum Ratings and Electrical Characteristics  
o
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
UF  
4007  
UF  
UF  
UF  
UF  
UF  
UF  
Symbol  
Type Number  
Units  
4001 4002 4003 4004 4005 4006  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800 1000  
560 700  
V
V
V
Maximum DC Blocking Voltage  
100  
800 1000  
Maximum Average Forward Rectified  
Current .375 (9.5mm) Lead Length  
o
I(AV)  
1.0  
30  
A
@TA = 55 C  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
IFSM  
A
V
Maximum Instantaneous Forward Voltage  
@ 1.0A  
VF  
1.0  
1.7  
o
Maximum DC Reverse Current @ TA=25 C  
5.0  
uA  
uA  
IR  
o
at Rated DC Blocking Voltage @ TA=125 C  
150  
Maximum Reverse Recovery Time ( Note 1 )  
Typical Junction Capacitance ( Note 2 )  
Typical Thermal Resistance (Note 3)  
Trr  
Cj  
50  
75  
nS  
pF  
17  
R
15  
60  
o
ΘJA  
C/W  
R
ΘJL  
o
Operating/Storage Temperature Range  
TJ, TSTG  
-65 to + 150  
C
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.  
3. Thermal Resistance from junction to ambient and from Junction to Lead Length .375”(9.5mm), P.C.B.  
Mounted.  
Notes:  
http://www.luguang.cn  
mail:lge@luguang.cn  

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