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UF28150 PDF预览

UF28150

更新时间: 2024-01-31 18:33:06
品牌 Logo 应用领域
泰科 - TE 晶体晶体管
页数 文件大小 规格书
3页 171K
描述
POWER MOSFET TRANSISTOR 150 WATTS, 100 - 500 MHz, 28 V

UF28150 技术参数

是否Rohs认证:符合生命周期:Transferred
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.37
Is Samacsys:N外壳连接:SOURCE
配置:COMMON SOURCE, 2 ELEMENTS最小漏源击穿电压:65 V
最大漏极电流 (ID):16 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):32 pF最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-CDFM-F4元件数量:2
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
功耗环境最大值:389 W最小功率增益 (Gp):8 dB
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

UF28150 数据手册

 浏览型号UF28150的Datasheet PDF文件第2页浏览型号UF28150的Datasheet PDF文件第3页 
UF28150J PRELIMINARY  
POWER MOSFET TRANSISTOR  
150 WATTS, 100 - 500 MHz, 28 V  
FEATURES  
OUTLINE DRAWING  
• N-Channel Enhancement Mode Device  
• Applications  
• 150 Watts CW  
• Common Source Gemini Configuration  
• RESFET Structure  
• Internal Input Impedance Matching  
• Gold Metallization  
ABSOLUTE MAXIMUM RATINGS AT 25°C  
Parameter  
Symbol  
Rating  
Units  
Drain-Source Voltage  
V
60  
V
V
DS  
Gate-Source Voltage  
Drain-Source Current  
Dissipation @25°C  
Storage Temperature  
Junction Temperature  
Thermal Resistance  
V
20  
28  
GS  
I
A
DS  
P
233  
W
D
Tstg  
Tj  
-55 to +150  
200  
°C  
°C  
°C/W  
0.75  
θjc  
ELECTRICAL CHARACTERISTICS AT 25°C (*per side)  
Parameter  
Symbol  
Min  
Max  
Units  
Test Conditions  
Drain-Source Breakdown  
Voltage  
BV  
60  
-
V
I =40 mA, V =0.0 V*  
GS  
DSS  
D
Drain-Source Leakage  
Current  
I
-
-
4.0  
2.0  
mA  
V
=28.0 V, V =0.0 V*  
GS  
DSS  
DS  
GS  
Gate-Source Leakage  
Current  
Gate Threshold Voltage  
Forward Transconductance  
Input Capacitance  
Reverse Capacitance  
Output Capacitance  
Power Gain  
I
V
=20 V, V =0.0 V*  
DS  
µA  
GSS  
V
2.0  
1.0  
6.0  
-
200  
50  
14  
-
V
S
V
V
V
V
V
V
V
V
=10.0 V, I =200 mA*  
DS  
GS(th)  
DS  
DS  
DS  
DS  
DS  
DD  
DD  
DD  
G
=10.0 V, I =2000 mA (pulsed)*  
DS  
m
C
pF  
pF  
pF  
dB  
%
-
=28.0 V, f=1.0 MHz (Reference Only)*  
=28.0 V, f=1.0 MHz*  
ISS  
C
RSS  
C
=28.0 V, f=1.0 MHz*  
=26 V, I =400 mA, Pout=80 W, F=960 MHz  
=26 V, I =400 mA, Pout=80 W, F=960 MHz  
DQ  
=26 V, I =400 mA, Pout=80 W, F=960 MHz  
DQ  
OSS  
G
P
10  
50  
-
DQ  
η
Collector Efficiency  
Load Mismatch Tolerance  
-
VSWR  
3.0:1  
TYPICAL OPTIMUM DEVICE IMPEDANCE  
F (MHz)  
935  
Z
(Ω)  
Z
(Ω)  
in  
load  
4.6 + j8.0  
4.7 + j7.8  
2.3 + j3.1  
2.4 + j3.1  
960  
M/A-COM POWER TRANSISTORS 1742 CRENSHAW BLVD TORRANCE, CA 90501  
(310) 320-6160 FAX (310) 618-9191  
M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS175 REV 02/16/96  

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