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UF2805B_11 PDF预览

UF2805B_11

更新时间: 2024-02-19 05:30:56
品牌 Logo 应用领域
泰科 - TE 晶体晶体管射频
页数 文件大小 规格书
3页 213K
描述
RF Power MOSFET Transistor

UF2805B_11 数据手册

 浏览型号UF2805B_11的Datasheet PDF文件第2页浏览型号UF2805B_11的Datasheet PDF文件第3页 
UF2805B  
RF Power MOSFET Transistor  
5W, 100-500 MHz, 28V  
Released; RoHS Compliant  
20 Jan 11  
Package Outline  
Features  
 N-channel enhancement mode device  
 DMOS structure  
 Lower capacitances for broadband operation  
 Common source configuration  
 Lower noise floor  
 100 MHz to 500 MHz operation  
ABSOLUTE MAXIMUM RATINGS AT 25° C  
Parameter  
Symbol  
VDS  
VGS  
IDS  
Rating  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain-Source Current  
Power Dissipation  
65  
20  
V
1.4  
A
PD  
14.4  
W
Junction Temperature  
Storage Temperature  
Thermal Resistance  
TJ  
200  
°C  
TSTG  
θJC  
-55 to +150  
12.1  
°C  
°C/W  
TYPICAL DEVICE IMPEDANCES  
F (MHz)  
100  
ZIN ()  
15.0-j80.0  
8.0-j43.0  
4.0-j29.0  
ZLOAD ()  
35.0+j55.0  
29.0+j40.0  
28.0+j29.0  
300  
500  
VDD=28V, IDQ=50 mA, POUT=100.0 W  
Z
IN is the series equivalent input impedance of the device  
from gate to source.  
Z
LOAD is the optimum series equivalent load impedance as  
measured from drain to ground  
ELECTRICAL CHARACTERISTICS AT 25°C  
Parameter  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
Gate Threshold Voltage  
Forward Transconductance  
Input Capacitance  
Symbol  
BVDSS  
IDSS  
Min  
65  
-
Max  
-
Units  
Test Conditions  
V
mA  
µA  
V
VGS = 0.0 V , IDS = 2.0 mA  
1.0  
1.0  
6.0  
-
VGS = 28.0 V , VGS = 0.0 V  
IGSS  
-
VGS = 20.0 V , VDS = 0.0 V  
VGS(TH)  
GM  
2.0  
80  
-
VDS = 10.0 V , IDS = 10.0 mA  
S
VDS = 10.0 V , IDS 1.0 mA , VGS = 1.0V, 80 μs Pulse  
VDS = 28.0 V , F = 1.0 MHz  
CISS  
7.0  
5
pF  
pF  
pF  
dB  
%
Output Capacitance  
-
VDS = 28.0 V , F = 1.0 MHz  
COSS  
CRSS  
GP  
Reverse Capacitance  
Power Gain  
-
2.4  
-
VDS = 28.0 V , F = 1.0 MHz  
10  
50  
-
VDD = 28.0 V, IDQ = 50 mA, POUT = 5.0 W F =500 MHz  
VDD = 28.0 V, IDQ = 50 mA, POUT = 5.0 W F =500 MHz  
VDD = 28.0 V, IDQ = 50 mA, POUT = 5.0 W F =500MHz  
Drain Efficiency  
ŋD  
-
Load Mismatch Tolerance  
VSWR-T  
20:1  
-
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  

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