®
UF1000FCT – UF1008FCT
10A GLASS PASSIVATED DUAL ULTRAFAST RECTIFIER
WON-TOP ELECTRONICS
Pb
Features
Glass Passivated Die Construction
B
Ultrafast 50nS and 100nS Recovery Time
Low Forward Voltage Drop
Low Reverse Leakage Current
ITO-220
C
Dim
A
B
C
D
E
Min
14.60
9.70
2.55
—
Max
15.40
10.30
2.85
High Surge Current Capability
G
A
E
Epoxy Meets UL 94V-0 Classification
Ideally Suited for Use in High Frequency
SMPS, Inverters and As Free Wheeling Diodes
PIN1
2
3
4.16
D
13.00
0.50
3.00 Ø
6.30
4.20
2.50
0.50
2.60
2.29
13.80
0.75
F
G
H
I
3.50 Ø
6.90
Mechanical Data
F
Case: ITO-220, Full Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 1.9 grams (approx.)
4.80
P
J
2.90
K
L
0.75
I
3.30
P
2.79
Mounting Position: Any
H
L
J
All Dimensions in mm
Mounting Torque: 0.6 N.m Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
PIN 1
PIN 3
PIN 2
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
UF
UF
UF
UF
UF
UF
UF
Characteristic
Symbol
Unit
1000FCT 1001FCT 1002FCT 1003FCT 1004FCT 1006FCT 1008FCT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
200
140
300
210
400
280
600
420
800
560
V
RMS Reverse Voltage
VR(RMS)
V
A
Average Rectified Output Current
@TC = 100°C
Total Device
Per Diode
10
5.0
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed
on Rated Load (JEDEC Method)
IFSM
125
A
Forward Voltage per diode
@IF = 5.0A
VFM
IRM
1.0
1.3
1.7
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 125°C
10
400
µA
Reverse Recovery Time (Note 1)
trr
50
60
100
40
nS
pF
Typical Junction Capacitance (Note 2)
CJ
Thermal Resistance Junction to Ambient per diode
Thermal Resistance Junction to Case per diode
RθJA
RθJC
62
4.5
°C/W
RMS Isolation Voltage, t = 1 min
VISO
1500
V
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
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