Datasheet > UF1000_09

UF1000_09

更新时间： 2024-01-14 22:02:49

品牌	Logo	应用领域
强茂 - PANJIT		二极管快恢复二极管超快恢复二极管快速恢复二极管
页数	文件大小	规格书
2页	82K
描述
ULTRAFAST RECOVERY RECTIFIERS

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中文翻译

获取价格

数据手册

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UF1000_09 数据手册

UF1000~UF1006

ULTRAFAST RECOVERYRECTIFIERS

10.0 Amperes

50 to 600 Volts

CURRENT

VOLTAGE

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O utilizing

Flame Retardant Epoxy Molding Compound.

• Exceeds environmental standards of

MIL-S-19500/228

• Low power loss, high efficiency.

• Low forwrd voltge, high current capability

• High surge capacity.

• Ultra fast recovery time, high voltage.

• In compliance with EU RoHS 2002/95/EC directives

.058(1.47)

.042(1.07)

MECHANCALDATA

• Case: TO-220AC full molded plastic package

• Terminals: Lead solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

• Standard packaging: Any

• Weight: 0.0655 ounces, 1.859 grams.

MAXIMUMRATINGSANDELECTRICALCHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PARAMETER

SYMBOL UF1000 UF1001 UF1002 UF1003 UF1004 UF1006 UNITS

Maximum Recurrent Peak Reverse Voltage

V_{R R M}

V_{R M S}

V_{D C}

100

200

140

200

300

210

300

400

280

400

600

420

600

Maximum RMS Voltage

Maximum DC Blocking Voltage

100

Maximum Average Forward Current at T_C= 100^O

I_{F ( A V )}

I_{F S M}

V_F

Peak Forward Surge Current :8.3ms single half sine-

wave superimposed on rated load(JEDEC method)

150

Maximum Forward Voltage at 10.0A

1.0

1.30

1.70

Maximum DC Reverse Current T_J=25^O

1.0

500

µA

I_R

at Rated DC Blocking Voltage T_J=125^O

Typical Junction Capacitance (Note 1)

C_J

t_{r r}

Maximum Reverse Recovery Time (Note 2)

Typical Thermal Resistance (Note 3)

100

^OC /

R_θJC

Operating Junction and Storage Temperature Range

T_J,T_{S T G}

-55 to +150

^OC

NOTES:

1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.

2. Reverse Recovery Test Conditions: I_F=.5A, I_R=1A, Irr=.25A.

3. Thermal resistance from Junction to case.

4. Both Bonding and Chip structure are available.

PAGE . 1

STAD-MAR.05.2009

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