Datasheet > UF1000_04

UF1000_04

更新时间： 2024-02-15 23:57:18

品牌	Logo	应用领域
强茂 - PANJIT		二极管快恢复二极管超快恢复二极管快速恢复二极管
页数	文件大小	规格书
2页	75K
描述
ULTRAFAST RECOVERY RECTIFIERS

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数据手册

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UF1000_04 数据手册

DATA SHEET

UF1000~UF1008

ULTRAFAST RECOVERYRECTIFIERS

Unit : inch (mm)

TO-220AC

10.0 Amperes

50 to 800 Volts

CURRENT

VOLTAGE

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O utilizing

Flame Retardant Epoxy Molding Compound.

.419(10.66)

.387(9.85)

.196(5.00)

.163(4.16)

.139(3.55)

MIN

.054(1.39)

.045(1.15)

• Exceeds environmental standards of

MIL-S-19500/228

• Low power loss, high efficiency.

• Low forwrd voltge, high current capability

• High surge capacity.

• Ultra fast recovery time, high voltage.

• Both normal and Pb free product are available :

Normal : 80~95% Sn, 5~20% Pb

Pb free: 98.5% Sn above

.038(0.96)

.019(0.50)

.025(0.65)MAX

MECHANCALDATA

Case: TO-220AC full molded plastic package

Terminals: Lead solderable per MIL-STD-202, Method 208

Polarity: As marked.

.1(2.54)

Standard packaging: Any

Weight: 0.08 ounces, 2.24grams.

MAXIMUMRATINGSANDELECTRICALCHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PARAMETER

SYMBOL UF1000 UF1001 UF1002 UF1003 UF1004 UF1006 UF1008 UNITS

Maximum Recurrent Peak Reverse Voltage

RRM

RMS

100

200

140

200

300

210

300

400

280

400

600

420

600

800

560

800

Maximum RMS Voltage

Maximum DC Blocking Voltage

100

Maximum Average Forward Current at Tc = 100^O

Peak Forward Surge Current :8.3ms single half sine-

wave superimposed on rated load(JEDEC method)

FSM

150

Maximum Forward Voltage at 10.0A

1.0

1.30

1.70

Maximum DC Reverse Current T

at Rated DC Blocking Voltage T

=25^O

=125^O

500

Typical Junction Capacitance (Note 1)

Maximum Reverse Recovery Time (Note 2)

Typical Thermal Resistance (Note 3)

100

RθJC

^OC / W

Operating Junction and Storage Temperature Range

NOTES:

,TSTG

-50 to +150

^OC

1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.

2. Reverse Recovery Test Conditions: I_F=.5A, I_R=1A, Irr=.25A.

3. Thermal resistance from Junction to case.

4. Both Bonding and Chip structure are available.

PAGE . 1

STAD-FEB.19.2004

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