Datasheet > UESD6V8S2B

UESD6V8S2B

更新时间： 2025-08-06 18:51:55

品牌	Logo	应用领域
英联电子 - UNIONSEMI		二极管
页数	文件大小	规格书
6页	121K
描述
5V双线ESD保护二极管阵列

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UESD6V8S2B 数据手册

UESD6V8S2B

Dual Line ESD Protection Diode Array

UESD6V8S2B SOT523

General Description

The UESD6V8S2B of TVS diode array is designed to protect sensitive electronics from damage

or latch-up due to ESD and is for use in applications where board space is at a premium. It is

unidirectional device and may be used on lines where the signal polarities are above ground, each

device will protect up to two lines.

TVS diodes are solid-state devices feature large cross-sectional area junctions for conducting high

transient currents, specifically for transient suppression. It offers desirable characteristics for

board level protection including fast response time, low operating, low clamping voltage, and no

device degradation.

The UESD6V8S2B may be used to meet the immunity requirements of IEC 61000-4-2, ±15kV air,

±8kV contact discharge and MIL-STD-883 METHOD 3015, ±8 kV HBM. The small package

makes them ideal for use in portable electronics such as cell phones, PDA’s, notebook computers,

and digital cameras.

Applications

Features

Transient Protection for Data & Power Lines

to IEC 61000-4-2 (ESD) ±15kV (Air), ±8kV

(Contact)

MIL-STD-883 3015 (HBM) ±8kV

Protect Two I/O Lines

Working Voltages: 5V

Low Leakage Current

Low Operating and Clamping Voltage

Solid-State Silicon Avalanche Technology

Cellular Handsets & Accessories

Cordless Phones

Personal Digital Assistants (PDA’s)

Notebooks & Handhelds

Portable Instrumentation

Digital Cameras

Peripherals

MP3 Players

Pin Configurations

Top View

M: Month Code

UESD6V8S2B

SOT523

________________________________________________________________________

http://www.union-ic.com Rev.03 Nov.2016 1/6

12 3 4 5 6

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