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UES806RE3 PDF预览

UES806RE3

更新时间: 2023-03-15 00:00:00
品牌 Logo 应用领域
美高森美 - MICROSEMI 功效二极管
页数 文件大小 规格书
3页 311K
描述
Rectifier Diode, 1 Phase, 1 Element, 50A, Silicon, DO-203AB, HERMETIC SEALED, METAL, DO-5, 2 PIN

UES806RE3 技术参数

生命周期:Active包装说明:O-MUPM-D1
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.69
应用:EFFICIENCY外壳连接:ANODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.25 V
JEDEC-95代码:DO-203ABJESD-30 代码:O-MUPM-D1
最大非重复峰值正向电流:600 A元件数量:1
相数:1端子数量:1
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:50 A封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
最大反向电流:70 µA最大反向恢复时间:0.05 µs
表面贴装:NO端子形式:SOLDER LUG
端子位置:UPPERBase Number Matches:1

UES806RE3 数据手册

 浏览型号UES806RE3的Datasheet PDF文件第2页浏览型号UES806RE3的Datasheet PDF文件第3页 
UES804 UES804HR2  
UES805 UES805HR2  
UES806 UES806HR2  
ULTRAFAST RECTIFIERS,  
S C O T T S D A L E D I V I S I O N  
High Efficiency, 50ATM  
DESCRIPTION  
APPEARANCE  
DO-5  
The UES804 series of ultrafast high-efficiency rectifiers is specifically  
designed for operation in power switching circuits operating at frequencies  
of 20 kHz or higher. These devices have demonstrated capability in  
passing power-stress testing to 25 thousand cycles with full-rated forward  
current turned on and off without a heat sink. This forces case temperature  
increases of 75 °C at which time the current is removed to simulate worst  
case applications. The switching times increase relatively little with  
temperature or at different currents.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Very Low Forward Voltage  
Power Switching Circuits 20 kHz and above  
with minimal parasitic switching losses  
Catch Diodes for Switching Regulators  
Output Rectifiers for High Frequency Square-  
Wave Inverters  
Very Fast Recovery Times  
High Reliability Screening Options with HR2 Suffix  
(ie. UES804HR2)  
Low Thermal Resistance  
Extremely Robust in Power Cycling  
High Surge Capability  
Mechanically rugged  
Standard Polarity is Cathode to Case. For Reverse  
Polarity, Add Suffix R (ie. UES804R)  
Hermetically Sealed  
ABSOLUTE MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Peak Inverse Voltage, UES804, UES804HR2……….200 V  
Peak Inverse Voltage, UES805, UES805HR2……….300 V  
Peak Inverse Voltage, UES806, UES806HR2……….400 V  
Average DC Output Current, IO @ TC = 100oC………50 A  
Surge Current, 8.3 ms …………………………………600 A  
Thermal Resistance, Junction to Case……………0.8 oC/W  
Operating and Storage Temp. Range…….-55oC to +150oC  
Industry Standard DO-5 (DO-203AB) Package  
with 11/16 inch Hex and 1/4-28 Threaded Stud  
Hermetically Sealed Metal and Glass Case  
Body  
Metal Surface Finish: Tin-Lead Plated  
Weight: 15.5 grams (approximate)  
Maximum Stud Torque: 30 inch pounds  
Marking: Part Number and Logo  
ELECTRICAL CHARACTERISTICS  
Maximum  
Forward  
Voltage  
Maximum  
Reverse  
Current  
Maximum  
Reverse  
Recovery  
Time*  
Working Peak  
Reverse  
Microsemi Part Number  
Voltage  
V
F
I
R
V
@ 50 A  
RWM  
t
@ VRWM  
rr  
tp = 300 µs  
TC = 25oC  
1.25 V  
TC = 125oC  
1.15 V  
TC = 25oC  
TC = 125oC  
30 mA  
UES804  
UES805  
UES806  
UES804HR2  
UES805HR2  
UES806HR2  
200 V  
300 V  
400 V  
50 ns  
70 µA  
* Measured in circuit IF = 0.5 A, IR = 1 A, IREC = 0.25 A  
Copyright 2003  
Microsemi  
Page 1  
9-20-2004 REV B  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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