生命周期: | Active | 包装说明: | O-LALF-W2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.66 |
应用: | ULTRA FAST RECOVERY | 外壳连接: | ISOLATED |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | O-LALF-W2 | 最大非重复峰值正向电流: | 70 A |
相数: | 1 | 端子数量: | 2 |
最大输出电流: | 5 A | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
最大反向恢复时间: | 0.05 µs | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UES1305HRS | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 5A, Silicon, |
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UES1305HRV | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 5A, Silicon, |
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UES1305HRX | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 5A, Silicon, |
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UES1305SM | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 5A, Silicon, MELF-2 |
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UES1305SM/TR | MICROCHIP |
获取价格 |
工作温度:-55°C ~ 150°C;最小工作结温:-55°C;最大工作结温(Tj): 1 |
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UES1305SME3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 5A, Silicon, MELF-2 |
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UES1306 | MICROSEMI |
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RECTIFIERS |
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UES1306 | NJSEMI |
获取价格 |
Diode Switching 8A 2-Pin GPR-4AM |
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UES1306 | DIGITRON |
获取价格 |
Descriptive : Rectifier; Type : Ultra Fast Recovery; Max Average Forward Current : 3; Max |
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UES1306-HR | DIGITRON |
获取价格 |
Descriptive : Rectifier; Type : Ultra Fast Recovery; Max Average Forward Current : 3; Max |
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