UDR-500
500 Watts - 40 Volts, Pulsed
Radar 400 - 450 MHz
GENERAL DESCRIPTION
CASE OUTLINE
55JV, STYLE 2
The UDR-500 is an internally matched, COMMON EMITTER transistor
capable of providing 500 Watts of pulsed RF output power at sixty
microseconds pulse width, two percent duty factor across the band 400-450
MHz. This hermetically solder sealed transistor is specifically designed for
long pulse radar applications. It utilizes gold metalization and diffused emitter
ballasting to provide high reliability and supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
1167 Watts
Maximum Voltage and Current
BVces
BVebo
Ic
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
60 Volts
4.0 Volts
35 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200oC
+ 200oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX UNITS
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 450 MHz
500
8.5
535
Watts
Watts
d B
Pout
Pin
Pg
Vcc = 40 Volts
Pulse Width = 60 µs
Duty = 2%
70
60
%
η
c
5:1
Rated Conditions
VSWR
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Emitter to Base Breakdown
DC Current Gain
Output Capacitance
Thermal Resistance
Ic = 50 mA
Ic = 30 mA
Ie = 20 mA
Vce =5 V, Ic =1A
Vcb = 40V, F =1 MHz
Rated Pulse Condition
70
30
4.0
20
Volts
Volts
BVces
BVceo
BVebo
Hfe
Cob
60
0.15
oC/W
θjc
Initial Issue June, 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120