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UDR-450 PDF预览

UDR-450

更新时间: 2024-11-03 21:11:39
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
3页 237K
描述
Transistor

UDR-450 技术参数

生命周期:Obsolete包装说明:,
针数:4Reach Compliance Code:compliant
风险等级:5.61Base Number Matches:1

UDR-450 数据手册

 浏览型号UDR-450的Datasheet PDF文件第2页浏览型号UDR-450的Datasheet PDF文件第3页 
UDR-450  
450 Watts - 40 Volts, Pulsed  
Radar 400 - 450 MHz  
GENERAL DESCRIPTION  
CASE OUTLINE  
55JV, STYLE 2  
The UDR-450 is an internally matched, COMMON EMITTER transistor  
capable of providing 450 Watts of pulsed RF output power at sixty  
microseconds pulse width, two percent duty factor across the band 400-450  
MHz. This hermetically solder-sealed transistor is specifically designed for  
radar applications. It utilizes gold metalization and diffused emitter ballasting  
to provide high reliability and supreme ruggedness.  
ABSOLUTE MAXIMUM RATINGS  
Maximum Power Dissipation @ 25oC  
1167 Watts  
Maximum Voltage and Current  
BVces  
BVebo  
Ic  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
60 Volts  
4.0 Volts  
35 Amps  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
- 65 to + 200oC  
+ 200oC  
ELECTRICAL CHARACTERISTICS @ 25 OC  
SYMBOL  
CHARACTERISTICS  
TEST CONDITIONS  
MIN  
TYP  
MAX UNITS  
Power Out  
Power Input  
Power Gain  
Collector Efficiency  
Load Mismatch Tolerance  
F = 450 MHz  
400  
7.5  
450  
Watts  
Watts  
dB  
Pout  
Pin  
Pg  
Vcc = 40 Volts  
Pulse Width = 60 µs  
Duty = 2%  
70  
60  
%
η
c
5:1  
Rated Conditions  
VSWR  
Collector to Emitter Breakdown  
Collector to Emitter Breakdown  
Emitter to Base Breakdown  
DC Current Gain  
Output Capacitance  
Thermal Resistance  
Ic = 50 mA  
Ic = 30 mA  
Ie = 20 mA  
Vce = 5 V, Ic = 1A  
Vcb = 40 V, F =1 MHz  
Rated Pulse Condition  
70  
30  
4.0  
20  
Volts  
Volts  
BVces  
BVceo  
BVebo  
Hfe  
Cob  
60  
0.15  
oC/W  
θjc  
Initial Issue June, 1994  
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT  
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,  
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.  
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120  

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