是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | DIP |
包装说明: | DIP, DIP8,.3 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 0.71 |
Is Samacsys: | N | 模拟集成电路 - 其他类型: | SWITCHING CONTROLLER |
控制模式: | CURRENT-MODE | 控制技术: | PULSE WIDTH MODULATION |
最大输入电压: | 12 V | 最小输入电压: | 4 V |
标称输入电压: | 10 V | JESD-30 代码: | R-PDIP-T8 |
JESD-609代码: | e4 | 长度: | 9.81 mm |
功能数量: | 1 | 端子数量: | 8 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
最大输出电流: | 1 A | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
座面最大高度: | 5.08 mm | 子类别: | Switching Regulator or Controllers |
最大供电电流 (Isup): | 25 mA | 标称供电电压 (Vsup): | 10 V |
表面贴装: | NO | 切换器配置: | SINGLE |
最大切换频率: | 1000 kHz | 技术: | BICMOS |
温度等级: | INDUSTRIAL | 端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 7.62 mm | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MC33262DR2 | ONSEMI |
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