UCC21759-Q1
SLUSEB4A – AUGUST 2020 – REVISEDUDCECCE2M1B7E5R92-Q0210
SLUSEB4A – AUGUST 2020 – REVISED DECEMBER 2020
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UCC21759-Q1 10-A Source/Sink Basic Isolated Single Channel Gate Driver
for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI
1 Features
3 Description
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3-kVRMS single channel isolated gate driver
AEC-Q100 qualified for automotive applications
Drives SiC MOSFETs and IGBTs up to 990Vpk
33-V maximum output drive voltage (VDD-VEE)
High peak drive current and high CMTI
±10-A drive strength and split output
150-V/ns minimum CMTI
200-ns response time fast DESAT protection
4-A internal active Miller clamp
400-mA soft turn-off under fault conditions
Isolated analog sensor with PWM output for
– Temperature sensing with NTC, PTC or thermal
diode
– High voltage DC-Link or phase voltage
Alarm FLT on over current and reset from RST/EN
Fast enable/disable response on RST/EN
Rejects <40-ns noise transients and pulses on
input pins
12-V VDD UVLO with power good on RDY
Inputs/outputs with over/under-shoot transient
voltage immunity up to 5 V
130-ns (maximum) propagation delay and 30-ns
(maximum) pulse/part skew
SOIC-16 DW package with creepage and
clearance distance > 8mm
The UCC21759-Q1 is a galvanic isolated single
channel gate driver designed for SiC MOSFETs and
IGBTs up to 990-V DC operating voltage with
advanced protection features, best-in-class dynamic
performance and robustness. UCC21759-Q1 has up
to ±10-A peak source and sink current.
The input side is isolated from the output side with
SiO2 capacitive isolation technology, supporting up to
700-VRMS working voltage with longer than 40 years
isolation barrier life, 6-kVPK surge immunity, as well as
providing low part-to-part skew, and >150-V/ns
common mode noise immunity (CMTI).
The UCC21759-Q1 includes the state-of-art protection
features, such as fast short circuit detection, fault
reporting, active Miller clamp, and input and output
side power supply UVLO optimized for SiC and IGBT
power transistors. The isolated analog to PWM sensor
can be utilized for easier temperature or voltage
sensing, further increasing the drivers' versatility and
simplifying the system design effort, size, and cost.
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Device Information
PART
PACKAGE
BODY SIZE (NOM)
NUMBER(1)
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UCC21759-Q1
DW SOIC-16
10.3 mm × 7.5 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
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Operating junction temperature –40°C to +150°C
Safety-related certifications (Planned):
– 6000-VPK basic isolation per DIN V VDE
V0884-11: 2017-01
Device Pin Configuration
– 3-kVRMS isolation for 1 minute per UL 1577
APWM
AIN
DESAT
COM
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2
3
4
5
6
7
8
16
15
VCC
RST/EN
FLT
2 Applications
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Traction inverter for EVs
On-board charger and charging pile
DC/DC converter for HEV/EVs
OUTH
VDD
RDY
INÅ
OUTL
CLMPI
VEE
IN+
GND
Not to scale
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
Copyright © 2020 Texas Instruments Incorporated
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