Datasheet > UCC21739QDWQ1

UCC21739QDWQ1

更新时间： 2024-09-19 11:13:59

品牌	Logo	应用领域
德州仪器 - TI		栅极驱动双极性晶体管驱动器
页数	文件大小	规格书
59页	4230K
描述
适用于 IGBT/SiC MOSFET 且具有隔离式模拟检测的汽车类 3kVrms ±10A 单通道隔离式栅极驱动器 \| DW \| 16 \| -40 to 125

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UCC21739-Q1

SLUSDS3 –MARCH 2020

UCC21739-Q1 10-A Source/Sink Isolated Single Channel Gate Driver

for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI

The input side is isolated from the output side with

SiO₂capacitive isolation technology, supporting up to

700-kV_RMSworking voltage, 6-kV_PKsurge immunity

basic isolation with longer than 40 years isolation

barrier life, as well as providing low part-to-part skew,

and >150-V/ns common mode noise immunity

(CMTI).

1 Features

•

3-kV_RMSsingle channel isolated gate driver

AEC-Q100 qualified for automotive applications

SiC MOSFETs and IGBTs up to 990-V_pk

33-V maximum output drive voltage (VDD-VEE)

±10-A drive strength and split output

The UCC21739-Q1 includes the state-of-art

protection features, such as fast overcurrent and

short circuit detection, shunt current sensing support,

fault reporting, active miller clamp, and input and

output side power supply UVLO to optimize SiC and

IGBT switching behavior and robustness. The

isolated analog to PWM sensor can be utilized for

easier temperature or voltage sensing, further

increasing the drivers' versatility and simplifying the

system design effort, size and cost.

150-V/ns minimum CMTI

270-ns response time fast overcurrent protection

External active miller clamp

Internal 2-level turn-off when fault happens

Isolated analog sensor with PWM output for

–

Temperature sensing with NTC, PTC or

thermal diode

–

High voltage DC-Link or phase voltage

Device Information⁽¹⁾

•

Alarm FLT on over current and reset from

RST/EN

PART NUMBER

PACKAGE

BODY SIZE (NOM)

•

Fast enable/disable response on RST/EN

UCC21739-Q1

DW SOIC-16

10.3 mm × 7.5 mm

Reject <40-ns noise transient and pulse on input

pins

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

•

12-V VDD UVLO with power good on RDY

Inputs/outputs with over/under-shoot transient

voltage Immunity up to 5 V

APWM

VCC

RST/EN

FLT

AIN

•

130-ns (maximum) propagation delay and 30-ns

(maximum) pulse/part skew

COM

OUTH

VDD

SOIC-16 DW package with creepage and

clearance distance > 8 mm

Operating junction temperature –40°C to 150°C

RDY

INÅ

OUTL

CLMPE

VEE

2 Applications

IN+

•

Traction inverter for EVs

On-board charger and charging pile

DC/DC Converter for HEV/EVs

GND

Not to scale

3 Description

The UCC21739-Q1 is a galvanic isolated single

channel gate drivers designed for SiC MOSFETs and

IGBTs up to 990-V DC operating voltage with

advanced protection features, best-in-class dynamic

performance and robustness. UCC21739-Q1 has up

to ±10-A peak source and sink current.

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

12 3 4 5 6 7...59

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与UCC21739QDWQ1相关器件

型号	品牌	获取价格	描述	数据表
UCC21739QDWRQ1	TI	获取价格	适用于 IGBT/SiC MOSFET 且具有隔离式模拟检测的汽车类 3kVrms ±10
UCC21750	TI	获取价格	适用于 IGBT/SiC FET 且具有 DESAT 和内部米勒钳位的 5.7kVrms
UCC21750DW	TI	获取价格	适用于 IGBT/SiC FET 且具有 DESAT 和内部米勒钳位的 5.7kVrms
UCC21750DWR	TI	获取价格	适用于 IGBT/SiC FET 且具有 DESAT 和内部米勒钳位的 5.7kVrms
UCC21750-Q1	TI	获取价格	适用于 IGBT/SiC MOSFET 且具有 DESAT 和内部钳位的汽车类 5.7kV
UCC21750QDWQ1	TI	获取价格	适用于 IGBT/SiC MOSFET 且具有 DESAT 和内部钳位的汽车类 5.7kV
UCC21750QDWRQ1	TI	获取价格	适用于 IGBT/SiC MOSFET 且具有 DESAT 和内部钳位的汽车类 5.7kV
UCC21755-Q1	TI	获取价格	具有主动保护和隔离式感应功能的汽车类 ±10A 隔离式单通道栅极驱动器
UCC21755QDWRQ1	TI	获取价格	具有主动保护和隔离式感应功能的汽车类 ±10A 隔离式单通道栅极驱动器 \| DW \| 16
UCC21756-Q1	TI	获取价格	Automotive, ± 10-A isolated single-channel g

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