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UCC21732DWR PDF预览

UCC21732DWR

更新时间: 2024-09-19 02:51:31
品牌 Logo 应用领域
德州仪器 - TI 双极性晶体管
页数 文件大小 规格书
55页 1876K
描述
UCC21732 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI

UCC21732DWR 数据手册

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UCC21732-Q1
SLUSD77 – AUGUST 2020  
UCC21732 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver  
for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI  
1 Features  
3 Description  
5.7-kVRMS single channel isolated gate driver  
SiC MOSFETs and IGBTs up to 2121Vpk  
33-V maximum output drive voltage (VDD-VEE)  
±10-A drive strength and split output  
150-V/ns minimum CMTI  
270-ns response time fast overcurrent protection  
Internal 2-level turn-off when fault happens  
Isolated analog sensor with PWM output for  
Temperature sensing with NTC, PTC or thermal  
diode  
– High voltage DC-Link or phase voltage  
Alarm FLT on over current and reset from RST/EN  
Fast enable/disable response on RST/EN  
Reject <40-ns noise transient and pulse on input  
pins  
12-V VDD UVLO with power good on RDY  
– VDD UVLO 12 V  
Inputs/outputs with over/under-shoot transient  
voltage Immunity up to 5 V  
130-ns (maximum) propagation delay and 30-ns  
(maximum) pulse/part skew  
SOIC-16 DW package with creepage and  
clearance distance > 8 mm  
The UCC21732 is a galvanic isolated single channel  
gate driver designed for SiC MOSFETs and IGBTs up  
to 2121-V DC operating voltage with advanced  
protection features, best-in-class dynamic  
performance and robustness. UCC21732 has up to  
±10-A peak source and sink current.  
The input side is isolated from the output side with  
SiO2 capacitive isolation technology, supporting up to  
1.5-kVRMS working voltage, 12.8-kVPK surge immunity  
with longer than 40 years Isolation barrier life, as well  
as providing low part-to-part skew , >150V/ns  
common mode noise immunity (CMTI).  
The UCC21732 includes the state-of-art protection  
features, such as fast overcurrent and short circuit  
detection, shunt current sensing support, fault  
reporting, active miller clamp, input and output side  
power supply UVLO to optimize SiC and IGBT  
switching behavior and robustness. The isolated  
analog to PWM sensor can be utilized for easier  
temperature or voltage sensing, further increasing the  
drivers' versatility and simplifying the system design  
effort, size and cost.  
Device Information (1)  
PART NUMBER  
PACKAGE  
BODY SIZE (NOM)  
Operating junction temperature –40°C to 150°C  
UCC21732  
DW SOIC-16  
10.3 mm × 7.5 mm  
2 Applications  
(1) For all available packages, see the orderable addendum at  
the end of the data sheet.  
Traction inverter for EVs  
On-board charger and charging pile  
DC/DC Converter for HEV/EVs  
Industrial motor drives  
Server, telecom, and industrial power supplies  
Uninterruptible power supplies (UPS)  
Device Pin Configuration  
APWM  
VCC  
RST/EN  
FLT  
AIN  
OC  
1
2
3
4
5
6
7
8
16  
15  
COM  
OUTH  
VDD  
14  
13  
12  
11  
10  
9
RDY  
INÅ  
OUTL  
CLMPE  
VEE  
IN+  
GND  
Not to scale  
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 

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