型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UCC21732 | TI |
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UCC21732 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with | |
UCC21732DW | TI |
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UCC21732 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with | |
UCC21732DWR | TI |
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UCC21732 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with | |
UCC21732-Q1 | TI |
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适用于 IGBT/SiC FET 且具有 2 级关断功能的汽车类 5.7kVrms ±10 | |
UCC21732-Q1_V01 | TI |
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UCC21732 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with | |
UCC21732QDWQ1 | TI |
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适用于 IGBT/SiC FET 且具有 2 级关断功能的汽车类 5.7kVrms ±10 | |
UCC21732QDWRQ1 | TI |
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适用于 IGBT/SiC FET 且具有 2 级关断功能的汽车类 5.7kVrms ±10 | |
UCC21736-Q1 | TI |
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适用于 IGBT/SiC MOSFET 且具有主动短路的汽车类 5.7kVrms ±10A | |
UCC21736QDWQ1 | TI |
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适用于 IGBT/SiC MOSFET 且具有主动短路的汽车类 5.7kVrms ±10A | |
UCC21736QDWRQ1 | TI |
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适用于 IGBT/SiC MOSFET 且具有主动短路的汽车类 5.7kVrms ±10A |