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UCC21530QDWKQ1

更新时间： 2024-09-19 11:07:03
品牌 Logo 应用领域
德州仪器 - TI 栅极驱动双极性晶体管驱动器
页数 文件大小 规格书
46页 2330K
描述
具有用于 IGBT/SiC 的 EN 和 DT 引脚的汽车类 4A/6A、5.7kVRMS 隔离式双通道栅极驱动器 | DWK | 14 | -40 to 125

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UCC21530QDWKQ1 数据手册

 浏览型号UCC21530QDWKQ1的Datasheet PDF文件第2页浏览型号UCC21530QDWKQ1的Datasheet PDF文件第3页浏览型号UCC21530QDWKQ1的Datasheet PDF文件第4页浏览型号UCC21530QDWKQ1的Datasheet PDF文件第5页浏览型号UCC21530QDWKQ1的Datasheet PDF文件第6页浏览型号UCC21530QDWKQ1的Datasheet PDF文件第7页 
UCC21530-Q1  
SLUSDG3D – AUGUST 2018 – REVISED APRIL 2021  
UCC21530-Q1 4-A, 6-A, 5.7-kVRMS Isolated Dual-Channel Gate Driver  
with 3.3-mm Channel-to-Channel Spacing  
1 Features  
3 Description  
•
AEC-Q100 qualified with:  
The UCC21530-Q1 is an isolated dual-channel gate  
driver with 4-A source and 6-A sink peak current. It  
is designed to drive IGBTs, Si MOSFETs, and SiC  
MOSFETs up to 5-MHz with best-in-class propagation  
delay and pulse-width distortion.  
– Device temperature grade 1  
– Device HBM ESD classification level H2  
– Device CDM ESD classification level C6  
Functional Safety Quality-Managed  
– Documentation available to aid functional safety  
system design  
Universal: dual low-side, dual high-side or half-  
bridge driver  
Wide body SOIC-14 (DWK) package  
3.3-mm spacing between driver channels  
Switching parameters:  
•
•
The input side is isolated from the two output  
drivers by a 5.7-kVRMS reinforced isolation barrier,  
with a minimum of 100-V/ns common-mode transient  
immunity (CMTI). Internal functional isolation between  
the two secondary-side drivers allows a working  
voltage of up to 1850 V.  
•
•
•
This driver can be configured as two low-side drivers,  
two high-side drivers, or a half-bridge driver with  
programmable dead time (DT). The EN pin pulled low  
shuts down both outputs simultaneously and allows  
for normal operation when left open or pulled high. As  
a fail-safe measure, primary-side logic failures force  
both outputs low.  
– 19-ns typical propagation delay  
– 10-ns minimum pulse width  
– 5-ns maximum delay matching  
– 6-ns maximum pulse-width distortion  
Common-mode transient immunity (CMTI) greater  
than 100-V/ns  
•
•
•
•
•
•
Isolation barrier life >40 years  
4-A peak source, 6-A peak sink output  
TTL and CMOS compatible inputs  
3-V to 18-V input VCCI range  
Up to 25-V VDD output drive supply  
– 8-V and 12-V VDD UVLO options  
Programmable overlap and dead time  
Rejects input pulses and noise transients shorter  
than 5 ns  
The device accepts VDD supply voltages up to 25 V.  
A wide input VCCI range from 3 V to 18 V makes  
the driver suitable for interfacing with both analog and  
digital controllers. All the supply voltage pins have  
under voltage lock-out (UVLO) protection.  
•
•
Device Information(1)  
PART NUMBER  
PACKAGE  
BODY SIZE (NOM)  
UCC21530-Q1  
DWK SOIC (14) 10.30 mm × 7.50 mm  
•
•
Operating temperature range –40 to +125°C  
Safety-related certifications:  
UCC21530B-Q1 DWK SOIC (14) 10.30 mm × 7.50 mm  
– 8000-VPK isolation per DIN V VDE V  
0884-11 :2017-01  
– 5.7-kVRMS isolation for 1 minute per UL 1577  
– CSA certification per IEC 60950-1, IEC  
62368-1, IEC 61010-1 and IEC 60601-1 end  
equipment standards  
(1) For all available packages, see the orderable addendum at  
the end of the data sheet.  
– CQC certification per GB4943.1-2011  
2 Applications  
•
•
•
•
•
•
HEV and BEV battery chargers  
Solar string and central inverters  
AC-to-DC and DC-to-DC charging piles  
AC inverter and servo drive  
AC-to-DC and DC-to-DC power delivery  
Energy storage systems  
Functional Block Diagram  
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
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