Datasheet > UC62LV0256EI

UC62LV0256EI

更新时间： 2024-11-18 22:17:51

品牌	Logo	应用领域
其他 - ETC		静态存储器
页数	文件大小	规格书
10页	424K
描述
Low Power CMOS SRAM 32K X8 Bits

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UC62LV0256EI 数据手册

Low Power CMOS SRAM

32K X8 Bits

UC62LV0256

-35/-55/-70

ꢀFeatures:

• Vcc operation voltage : 2.0V ~ 3.6V

• Low power consumption :

10mA (Max.) operating current

0.1uA (Typ.) CMOS standby current

• High Speed Access time :

ꢀDescription

The UC62LV0256 is a high performance, very low power

CMOS Static Random Access Memory organized as 32,768

words by 8 bits and operates from a wide range of 2.0V to

3.6V supply voltage. Advanced CMOS technology and circuit

techniques provide both high speed and low power features

with a typical CMOS standby current of 1uA and maximum

access time of 70ns in 2.0V operation.

35ns (Max.) at Vcc = 2.7V

55ns (Max.) at Vcc = 2.7V

70ns (Max.) at Vcc = 2.0V

Easy memory expansion is provided enable (CE), and

active LOW output enable (OE) and three-state output

drivers.

The UC62LV0256 has an automatic power down feature,

reducing the power consumption significantly when chip is

deselected.

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Data retention supply voltage as low as 1.2V

• Easy expansion with CE\ and OE\ options

The UC62LV0256 is available in the JEDEC standard 28 pin

330mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP

and 8mmx13.4mm TSOP (normal type).

ꢀPRODUCT FAMILY

Speed

(ns)

Vcc=2.7V

Power Consumption

Product

Family

Operating

Temperature

Package

Type

Vcc Range

STANDBY

Vcc=3.0V

VCC=3.6V Operating (Max)

35ns

55ns

70ns

UC62LV0256BC

UC62LV0256CC

UC62LV0256DC

UC62LV0256EC

UC62LV0256AC

UC62LV0256BI

UC62LV0256CI

UC62LV0256DI

UC62LV0256EI

UC62LV0256AI

SOP-28

TSOP-28

PDIP-28

SOJ-28

DICE

0℃~ 70℃

-25℃~ 85

2.0V ~ 3.6V

-35/ -55/ -70

0.1uA

17mA

13mA

10mA

SOP-28

TSOP-28

PDIP-28

SOJ-28

DICE

2.0V ~ 3.6V

-35/ -55/ -70

0.1uA

17mA

13mA

10mA

ꢀPIN CONFIGURATIONS

ꢀBLOCK DIAGRAM

A14

A12

VCC

A13

ROW

Address

MEMORY ARRAY

32K X 8 Bits

UC62LV0256BI

UC62LV0256DI

UC62LV0256EI

UC62LV0256BC

UC62LV0256DC

UC62LV0256EC

COL

Address

A11

COLUMN DECODER

A10

SENSE AMPLIFIER

WRITE DRIVER

DQ7

DQ6

DQ5

DQ4

DQ3

DQ0

DQ1

DQ2

GND

I/O BUFFER

A11

A10

DQ7

DQ6

DQ5

DQ4

DQ3

GND

DQ2

DQ1

DQ0

A13

VCC

A14

A12

UC62LV0256CC

UC62LV0256CI

U-Chip Technology Corp. LTD.

Reserves the right to modify document contents without notice.

Revision 2.0

PAGE 1

12 3 4 5 6 7...10

中文翻译

下载PDF

与UC62LV0256EI相关器件

型号	品牌	获取价格	描述	数据表
UC62LV1008-55	ETC	获取价格	LOW POWER CMOS SRAM 128K X 8BITS
UC62LV1024	ETC	获取价格	Low Power CMOS SRAM
UC62LV1024AC-55	ETC	获取价格	Low Power CMOS SRAM
UC62LV1024AC-70	ETC	获取价格	Low Power CMOS SRAM
UC62LV1024AI-55	ETC	获取价格	Low Power CMOS SRAM
UC62LV1024AI-70	ETC	获取价格	Low Power CMOS SRAM
UC62LV1024JC-55	ETC	获取价格	Low Power CMOS SRAM
UC62LV1024JC-70	ETC	获取价格	Low Power CMOS SRAM
UC62LV1024JI-55	ETC	获取价格	Low Power CMOS SRAM
UC62LV1024JI-70	ETC	获取价格	Low Power CMOS SRAM

与UC62LV0256EI相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

23
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

15
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

45
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

45

产品中心

服务支持

精选活动

关于我们

帮助中心

UC62LV0256EI

UC62LV0256EI 数据手册

与UC62LV0256EI相关器件

与UC62LV0256EI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UC62LV0256EI

UC62LV0256EI 数据手册

与UC62LV0256EI相关器件

与UC62LV0256EI相关文章

您还可以找

您在本页遇到什么问题？