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UC3611M PDF预览

UC3611M

更新时间: 2022-10-12 16:25:37
品牌 Logo 应用领域
德州仪器 - TI /
页数 文件大小 规格书
4页 160K
描述
QUAD SCHOTTKY DIODE ARRAY

UC3611M 数据手册

 浏览型号UC3611M的Datasheet PDF文件第2页浏览型号UC3611M的Datasheet PDF文件第3页浏览型号UC3611M的Datasheet PDF文件第4页 
UC1611  
UC3611  
Quad Schottky Diode Array  
FEATURES  
DESCRIPTION  
Matched, Four-Diode Monolithic Array This four-diode array is designed for general purpose use as individual  
diodes or as a high-speed, high-current bridge. It is particularly useful on  
the outputs of high-speed power MOSFET drivers where Schottky diodes  
High Peak Current  
are needed to clamp any negative excursions caused by ringing on the  
driven line.  
Low-Cost MINIDIP Package  
Low-Forward Voltage  
These diodes are also ideally suited for use as voltage clamps when driv-  
ing inductive loads such as relays and solenoids, and to provide a path  
for current free-wheeling in motor drive applications.  
Parallelable for Lower VF or Higher IF  
Fast Recovery Time  
The use of Schottky diode technology features high efficiency through  
lowered forward voltage drop and decreased reverse recovery time.  
Military Temperature Range Available  
This single monolithic chip is fabricated in both hermetic CERDIP and  
copper-leaded plastic packages. The UC1611 in ceramic is designed for  
-55°C to +125°C environments but with reduced peak current capability:  
while the UC3611 in plastic has higher current rating over a 0°C to +70°C  
ambient temperature range.  
CONNECTION DIAGRAM  
DIL-8 (TOP VIEW)  
N or J Package  
SOIC-16 (TOP VIEW)  
DW Package  
PLCC-20 (TOP VIEW)  
Q Package  
6/93  

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