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UC3611J

更新时间： 2024-11-24 12:02:03
品牌 Logo 应用领域
德州仪器 - TI 肖特基二极管
页数 文件大小 规格书
7页 179K
描述
QUAD SCHOTTKY DIODE ARRAY

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中文翻译

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UC3611J 数据手册

 浏览型号UC3611J的Datasheet PDF文件第2页浏览型号UC3611J的Datasheet PDF文件第3页浏览型号UC3611J的Datasheet PDF文件第4页浏览型号UC3611J的Datasheet PDF文件第5页浏览型号UC3611J的Datasheet PDF文件第6页浏览型号UC3611J的Datasheet PDF文件第7页 
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SLUS338A – JUNE 1993 – REVISED MAY 2001  
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FEATURES  
DESCRIPTION  
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Matched, Four-Diode Monolithic Array  
High Peak Current  
This four-diode array is designed for general  
purpose use as individual diodes or as a  
high-speed, high-current bridge. It is particularly  
useful on the outputs of high-speed power  
MOSFET drivers where Schottky diodes are  
needed to clamp any negative excursions caused  
by ringing on the driven line.These diodes are also  
ideally suited for use as voltage clamps when  
driving inductive loads such as relays and  
solenoids, and to provide a path for current  
free-wheeling in motor drive applications.The use  
of Schottky diode technology features high  
efficiency through lowered forward voltage drop  
and decreased reverse recovery time.This single  
monolithic chip is fabricated in both hermetic  
CERDIP and copper-eaded plastic packages.  
The UC1611 in ceramic is designed for –55°C to  
125°C environments but with reduced peak  
current capability: while the UC3611 in plastic has  
higher current rating over a 0°C to 70°C ambient  
temperature range.  
Low-Cost MINIDIP Package  
Low-Forward Voltage  
Parallelable for Lower V or Higher I  
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Fast Recovery Time  
Military Temperature Range Available  
AVAILABLE OPTIONS  
Packaged Devices  
T
= T  
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SOIC Wide (DW)  
UC1611DW  
DIL (J)  
UC1611J  
UC3611J  
DIL (N)  
UC1611N  
UC3611N  
–55°C to 125°C  
0°C to 70°C  
UC3611DW  
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Copyright 2001, Texas Instruments Incorporated  
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ꢚ ꢞ ꢛ ꢚꢓ ꢔꢨ ꢖꢕ ꢙ ꢡꢡ ꢟꢙ ꢗ ꢙ ꢘ ꢞ ꢚ ꢞ ꢗ ꢛ ꢣ  
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中文翻译

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UC3611J 替代型号

型号 品牌 替代类型 描述 数据表
5962-9053801PA TI

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UC1611J TI

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