UC3610NG4

更新时间： 2024-01-20 09:42:58

品牌	Logo	应用领域
德州仪器 - TI		整流二极管肖特基二极管桥式整流二极管测试光电二极管
页数	文件大小	规格书
13页	647K
描述
DUAL SCHOTTKY DIODE BRIDGE

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UC3610NG4 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DIP	包装说明：	DIP-8
针数：	8	Reach Compliance Code：	compliant
HTS代码：	8541.10.00.80	风险等级：	5.7
Is Samacsys：	N	配置：	COMPLEX
二极管元件材料：	SILICON	二极管类型：	BRIDGE RECTIFIER DIODE
最大正向电压 (VF)：	1.3 V	JEDEC-95代码：	MS-001BA
JESD-30 代码：	R-PDIP-T8	JESD-609代码：	e4
元件数量：	8	相数：	1
端子数量：	8	最高工作温度：	70 °C
最低工作温度：		最大输出电流：	3 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	IN-LINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
最大功率耗散：	1 W	认证状态：	Not Qualified
最大重复峰值反向电压：	50 V	最大反向电流：	1000 µA
反向测试电压：	40 V	子类别：	Other Diodes
表面贴装：	NO	技术：	SCHOTTKY
端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)	端子形式：	THROUGH-HOLE
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

UC3610NG4 数据手册

UC1610

UC3610

SLUS339B − JUNE 1993 − REVISED DECEMBER 2004

DUAL SCHOTTKY DIODE BRIDGE

FEATURES

DESCRIPTION

Monolithic Eight-Diode Array

This eight-diode array is designed for

Exceptional Efficiency

Low Forward Voltage

Fast Recovery Time

High Peak Current

Small Size

high-current, low duty-cycle applications typical of

flyback voltage clamping for inductive loads. The

dual bridge connection makes this device

particularly applicable to bipolar driven stepper

motors.

The use of Schottky diode technology features

high efficiency through lowered forward voltage

drop and decreased reverse recovery time.

This single monolithic chip is fabricated in both

hermetic CERDIP and copper-leaded plastic

packages. The UC1610 in ceramic is designed for

−55°C to 125°C environments but with reduced

peak current capability. The UC2610 in plastic and

ceramic is designed for −25°C to 125°C

environments also with reduced peak current

capability; while the UC3610 in plastic has higher

current rating over a 0°C to 70°C temperature

range.

AVAILABLE OPTIONS

Packaged Devices

= T

SOIC Wide (DW)

UC1610DW

DIL (J)

DIL (N)

−55°C to 125°C

−25°C to 125°C

0°C to 70°C

UC1610J

UC2610J

UC3610J

UC1610N

UC2610N

UC3610N

UC2610DW

UC3610DW

THERMAL INFORMATION

PACKAGE

SOIC (DW) 16 pin

DIP (J) 8 pin

θja

θjc

(1)

50 − 100

(2)

125 − 160

(1)

DIP (N) 8 pin

103

NOTES: 1. Specified θja (junction-to-ambient) is for devices mounted to 5-in FR4 PC board with one ounce copper where noted. When

resistance range is given, lower values are for 5-in aluminum PC board. Test PWB was 0.062 in thick and typically used 0.635-mm

trace widths for power packages and 1.3-mm trace widths for non-power packages with a 100-mil x 100-mil probe land area at the

end of each trace.

2. θjc data values stated were derived from MIL−STD−1835B. MIL−STD−1835B states that the baseline values shown are worst case

(mean + 2s) for a 60-mil x 60-mil microcircuit device silicon die and applicable for devices with die sizes up to 14400 square mils.

For device die sizes greater than 14400 square mils use the following values; dual-in-line, 11°C/W; flat pack, 10°C/W; pin grid array,

10°C/W.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

www.ti.com

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与UC3610NG4相关器件

型号	品牌	描述	获取价格	数据表
UC3610Q	TI	DUAL SCHOTTKY DIODE BRIDGE	获取价格
UC3610QTR	TI	DUAL SCHOTTKY DIODE BRIDGE	获取价格
UC3611	TI	Quad Schottky Diode Array	获取价格
UC3611DW	TI	QUAD SCHOTTKY DIODE ARRAY	获取价格
UC3611DWG4	TI	QUAD SCHOTTKY DIODE ARRAY	获取价格
UC3611DWTR	TI	SILICON, RECTIFIER DIODE, GREEN, WIDE, SOIC-16	获取价格

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