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UC3610J PDF预览

UC3610J

更新时间: 2024-11-30 23:38:55
品牌 Logo 应用领域
其他 - ETC 二极管
页数 文件大小 规格书
4页 107K
描述
BRIDGE/RING DIODE ARRAY|SO

UC3610J 数据手册

 浏览型号UC3610J的Datasheet PDF文件第2页浏览型号UC3610J的Datasheet PDF文件第3页浏览型号UC3610J的Datasheet PDF文件第4页 
ꢀ ꢁꢂ ꢃꢂ ꢄ  
ꢀ ꢁꢅ ꢃꢂ ꢄ  
SLUS339A – JUNE 1993 – REVISED MAY 2001  
FEATURES  
DESCRIPTION  
D
D
D
D
D
D
Monolithic Eight-Diode Array  
Exceptional Efficiency  
Low Forward Voltage  
Fast Recovery Time  
High Peak Current  
Small Size  
This eight-diode array is designed for  
high-current, low duty-cycle applications typical of  
flyback voltage clamping for inductive loads. The  
dual bridge connection makes this device  
particularly applicable to bipolar driven stepper  
motors.  
The use of Schottky diode technology features  
high efficiency through lowered forward voltage  
drop and decreased reverse recovery time.  
This single monolithic chip is fabricated in both  
hermetic CERDIP and copper-leaded plastic  
packages. The UC1610 in ceramic is designed for  
–55°C to 125°C environments but with reduced  
peak current capability. The UC2610 in plastic and  
ceramic is designed for –25°C to 125°C  
environments also with reduced peak current  
capability; while the UC3610 in plastic has higher  
current rating over a 0°C to 70°C temperature  
range.  
AVAILABLE OPTIONS  
Packaged Devices  
DIL (J)  
T
= T  
J
A
SOIC Wide (DW)  
UC1610DW  
DIL (N)  
–55°C to 125°C  
–25°C to 125°C  
0°C to 70°C  
UC1610J  
UC2610J  
UC3610J  
UC1610N  
UC2610N  
UC3610N  
UC2610DW  
UC3610DW  
ꢌꢡ  
Copyright 2001, Texas Instruments Incorporated  
ꢝ ꢡ ꢞ ꢝꢖ ꢗꢫ ꢙꢘ ꢜ ꢤꢤ ꢢꢜ ꢚ ꢜ ꢛ ꢡ ꢝ ꢡ ꢚ ꢞ ꢦ  
1
www.ti.com  

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