UC3610

更新时间： 2024-12-01 12:02:03

品牌	Logo	应用领域
德州仪器 - TI		肖特基二极管
页数	文件大小	规格书
13页	647K
描述
DUAL SCHOTTKY DIODE BRIDGE

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中文翻译

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数据手册
替代型号

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UC3610 数据手册

UC1610

UC3610

SLUS339B − JUNE 1993 − REVISED DECEMBER 2004

DUAL SCHOTTKY DIODE BRIDGE

FEATURES

DESCRIPTION

Monolithic Eight-Diode Array

This eight-diode array is designed for

Exceptional Efficiency

Low Forward Voltage

Fast Recovery Time

High Peak Current

Small Size

high-current, low duty-cycle applications typical of

flyback voltage clamping for inductive loads. The

dual bridge connection makes this device

particularly applicable to bipolar driven stepper

motors.

The use of Schottky diode technology features

high efficiency through lowered forward voltage

drop and decreased reverse recovery time.

This single monolithic chip is fabricated in both

hermetic CERDIP and copper-leaded plastic

packages. The UC1610 in ceramic is designed for

−55°C to 125°C environments but with reduced

peak current capability. The UC2610 in plastic and

ceramic is designed for −25°C to 125°C

environments also with reduced peak current

capability; while the UC3610 in plastic has higher

current rating over a 0°C to 70°C temperature

range.

AVAILABLE OPTIONS

Packaged Devices

= T

SOIC Wide (DW)

UC1610DW

DIL (J)

DIL (N)

−55°C to 125°C

−25°C to 125°C

0°C to 70°C

UC1610J

UC2610J

UC3610J

UC1610N

UC2610N

UC3610N

UC2610DW

UC3610DW

THERMAL INFORMATION

PACKAGE

SOIC (DW) 16 pin

DIP (J) 8 pin

θja

θjc

(1)

50 − 100

(2)

125 − 160

(1)

DIP (N) 8 pin

103

NOTES: 1. Specified θja (junction-to-ambient) is for devices mounted to 5-in FR4 PC board with one ounce copper where noted. When

resistance range is given, lower values are for 5-in aluminum PC board. Test PWB was 0.062 in thick and typically used 0.635-mm

trace widths for power packages and 1.3-mm trace widths for non-power packages with a 100-mil x 100-mil probe land area at the

end of each trace.

2. θjc data values stated were derived from MIL−STD−1835B. MIL−STD−1835B states that the baseline values shown are worst case

(mean + 2s) for a 60-mil x 60-mil microcircuit device silicon die and applicable for devices with die sizes up to 14400 square mils.

For device die sizes greater than 14400 square mils use the following values; dual-in-line, 11°C/W; flat pack, 10°C/W; pin grid array,

10°C/W.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

www.ti.com

12 3 4 5 6 7...13

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UC3610 替代型号

型号	品牌	替代类型	描述	数据表
UC2610	TI	功能相似	Dual Schottky Diode Bridge
UC1610	TI	功能相似	Dual Schottky Diode Bridge

与UC3610相关器件

型号	品牌	获取价格	描述	数据表
UC3610DW	TI	获取价格	DUAL SCHOTTKY DIODE BRIDGE
UC3610DWG4	TI	获取价格	DUAL SCHOTTKY DIODE BRIDGE
UC3610DWTR	TI	获取价格	DUAL SCHOTTKY DIODE BRIDGE
UC3610DWTRG4	TI	获取价格	DUAL SCHOTTKY DIODE BRIDGE
UC3610J	ETC	获取价格	BRIDGE/RING DIODE ARRAY\|SO
UC3610N	TI	获取价格	DUAL SCHOTTKY DIODE BRIDGE
UC3610NG4	TI	获取价格	DUAL SCHOTTKY DIODE BRIDGE
UC3610Q	TI	获取价格	DUAL SCHOTTKY DIODE BRIDGE
UC3610QTR	TI	获取价格	DUAL SCHOTTKY DIODE BRIDGE
UC3611	TI	获取价格	Quad Schottky Diode Array

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