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UC1825-DIE_15

更新时间: 2024-11-05 01:08:19
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德州仪器 - TI /
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5页 120K
描述
RAD-TOLERANT, HIGH-SPEED PWM CONTROLLER

UC1825-DIE_15 数据手册

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UC1825-DIE  
www.ti.com  
SLUSBO1 JULY 2013  
RAD-TOLERANT, HIGH-SPEED PWM CONTROLLER  
Check for Samples: UC1825-DIE  
1
FEATURES  
(1)  
Rad-Tolerant: 30 kRad (Si) TID  
Wide Bandwidth Error Amplifier  
Compatible With Voltage- or Current-Mode  
Topologies  
Fully Latched Logic With Double-Pulse  
Suppression  
Practical Operation Switching Frequencies  
50-ns Propagation Delay-to-Output  
Pulse-by-Pulse Current Limiting  
Soft Start/Maximum Duty-Cycle Control  
Undervoltage Lockout With Hysteresis  
Low Start-Up Current  
High-Current Dual Totem Pole Outputs  
(1) Radiation tolerance is a typical value based upon initial device  
qualification with dose rate = 10 mrad/sec. Radiation Lot  
Acceptance Testing is available - contact factory for details.  
DESCRIPTION  
The UC1825-DIE PWM control device is optimized for high-frequency switched mode power supply applications.  
Particular care was given to minimizing propagation delays through the comparators and logic circuitry while  
maximizing bandwidth and slew rate of the error amplifier. This controller is designed for use in either current-  
mode or voltage mode systems with the capability for input voltage feed-forward.  
Protection circuitry includes a current limit comparator with a 1-V threshold, a TTL compatible shutdown port, and  
a soft start pin which will double as a maximum duty-cycle clamp. The logic is fully latched to provide jitter-free  
operation and prohibit multiple pulses at an output. An undervoltage lockout section with 800 mV of hysteresis  
assures low start up current. During undervoltage lockout, the outputs are high impedance.  
This device features totem pole outputs designed to source and sink high peak currents from capacitive loads,  
such as the gate of a power MOSFET. The on state is designed as a high level.  
ORDERING INFORMATION(1)  
PACKAGE  
DESIGNATOR  
PRODUCT  
PACKAGE  
ORDERABLE PART NUMBER  
PACKAGE QUANTITY  
UC1825VTD1  
UC1825VTD2  
88  
10  
UC1825  
TD  
Bare die in waffle pack(2)  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
web site at www.ti.com.  
(2) Processing is per the Texas Instruments space production baseline and is in compliance with the Texas Instruments Quality Control  
System in effect at the time of manufacture. Electrical screening consists of DC parametric and functional testing at room temperature  
only. Unless otherwise specified by Texas Instruments AC performance and performance over temperature is not warranted. Visual  
Inspection is performed in accordance with MIL-STD-883 Test Method 2010 Condition B at 75X minimum.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2013, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  

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